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Tunable Band‐to‐Band Tunneling and Conducting Path Transition in Local‐Control‐Gate Heterostructure Transistor

Advanced functional materials, 2024-10, Vol.34 (40), p.n/a

2024

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Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

Advanced materials (Weinheim), 2011-09, Vol.23 (36), p.4178-4182

2011

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Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions

Advanced functional materials, 2022-03, Vol.32 (13), p.n/a

2022

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Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

Advanced functional materials, 2021-06, Vol.31 (23), p.n/a

2021

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Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Advanced materials (Weinheim), 2019-02, Vol.31 (6), p.e1805860-n/a

2019

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Understanding of the aging pattern in quantum dot light-emitting diodes using low-frequency noise

Nanoscale, 2020-08, Vol.12 (29), p.15888-15895

2020

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Doping‐Induced Performance Improvement in ReS2 Field Effect Transistors: Exploring a Heterostructure with In2O3 Quantum Dots

Advanced electronic materials, 2024-07, Vol.10 (7), p.n/a

2024

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Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Nanoscale, 2019-11, Vol.11 (45), p.22118-22124

2019

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Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation

Nano letters, 2013-08, Vol.13 (8), p.3494-3500

2013

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Piezo-impedance response of carbon nanotube/polydimethylsiloxane nanocomposites

APL materials, 2019-04, Vol.7 (4), p.041118-041118-5

2019

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Facile Fabrication of SWCNT/SnO2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate

Advanced functional materials, 2011-11, Vol.21 (21), p.4159-4165

2011

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Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

Advanced electronic materials, 2021-09, Vol.7 (9), p.n/a

2021

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Reconfigurable Si Nanowire Nonvolatile Transistors

Advanced electronic materials, 2018-01, Vol.4 (1), p.n/a

2018

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Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

NPJ 2D materials and applications, 2021-01, Vol.5 (1), p.1-9, Article 4

2021

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors

Microelectronic engineering, 2019-02, Vol.207, p.50-54

2019

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Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Nanoscale, 2018-10, Vol.10 (37), p.17557-17566

2018

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Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

Advanced materials (Weinheim), 2012-05, Vol.24 (19), p.2631-2636

2012

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Electric Property Evolution of Structurally Defected Multilayer Graphene

Nano letters, 2008-10, Vol.8 (10), p.3092-3096

2008

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Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Nanotechnology, 2021-04, Vol.32 (16), p.165202-165202

2021

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Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Nanotechnology, 2016-09, Vol.27 (38), p.385703-385703

2016

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Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

Nanoscale, 2019-03, Vol.11 (10), p.4219-4225

2019

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Soft-type trap-induced degradation of MoS2 field effect transistors

Nanotechnology, 2018-06, Vol.29 (22), p.22LT01-22LT01

2018

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Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Microelectronic engineering, 2018-11, Vol.199, p.40-44

2018

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Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

Nanotechnology, 2018-02, Vol.29 (6), p.065703-065703

2018

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Tunable Band‐to‐Band Tunneling and Conducting Path Transition in Local‐Control‐Gate Heterostructure Transistor

Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation

Emergence of Quantum Tunneling in Ambipolar Black Phosphorus Multilayers without Heterojunctions

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Understanding of the aging pattern in quantum dot light-emitting diodes using low-frequency noise

Doping‐Induced Performance Improvement in ReS2 Field Effect Transistors: Exploring a Heterostructure with In2O3 Quantum Dots

Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation

Piezo-impedance response of carbon nanotube/polydimethylsiloxane nanocomposites

Facile Fabrication of SWCNT/SnO2 Nanowire Heterojunction Devices on Flexible Polyimide Substrate

Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

Reconfigurable Si Nanowire Nonvolatile Transistors

Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

Electric Property Evolution of Structurally Defected Multilayer Graphene

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

Soft-type trap-induced degradation of MoS2 field effect transistors

Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

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