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SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch

Materials science forum, 2009, Vol.600-603, p.901-906

2009

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Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.125-129

1999

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600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Materials science forum, 2010-01, Vol.645-648, p.1147-1150

2010

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Modeling of silicon carbide chemical vapor deposition in a vertical reactor

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.172-175

1999

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10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Materials science forum, 2010-04, Vol.645-648, p.1025-1028, Article 1025

2010

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Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure

Materials science forum, 2010-04, Vol.645-648, p.573-576

2010

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Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.705-708

2010

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Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.176-178

1999

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3kV 4H-SiC Thyristors for Pulsed Power Applications

Materials science forum, 2010, Vol.645-648, p.1053-1056

2010

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Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Materials science forum, 2010-01, Vol.645-648, p.351-354

2010

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Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers

Materials science forum, 2010-01, Vol.645-648, p.737-740

2010

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Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

Materials science forum, 2010-01, Vol.645-648, p.929-932

2010

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Differences between Graphene Grown on Si-Face and C-Face

Materials science forum, 2010-01, Vol.645-648, p.581-584

2010

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Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Materials science forum, 2010, Vol.645-648, p.331-334

2010

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Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers

Materials science forum, 2010-01, Vol.645-648, p.327-330

2010

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Fast Switching with SiC VJFETs - Influence of the Device Topology

Materials science forum, 2010-01, Vol.645-648, p.933-936

2010

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Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction

Materials science forum, 2010-01, Vol.645-648, p.251-254

2010

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Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors

Materials science forum, 2010-01, Vol.645-648, p.709-712

2010

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SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch

Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure

Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

3kV 4H-SiC Thyristors for Pulsed Power Applications

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

Differences between Graphene Grown on Si-Face and C-Face

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers

Fast Switching with SiC VJFETs - Influence of the Device Topology

Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors

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