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Modeling of Short-Channel Effects in GaN HEMTs

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3088-3094

2020

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Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5577-5583

2023

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Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4093-4101

2024

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Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.911-915

2024

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Investigation of Electron Effective Mass in AlGaN/GaN Heterostructures by THz Spectroscopy of Drude Conductivity

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3636-3640

2022

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Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-6

2023

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Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6046-6051

2021

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Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2293-2298

2022

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Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3732-3738

2018

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Ultra-High-Q Gallium Nitride SAW Resonators for Applications With Extreme Temperature Swings

Journal of microelectromechanical systems, 2020-10, Vol.29 (5), p.900-905

2020

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High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2241-2246

2023

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Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors With Enhanced Performance

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3468-3474

2023

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Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1712-1717

2020

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A Reconfigurable Surface Acoustic Wave Filter on ZnO/AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4507-4514

2020

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A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5553-5558

2021

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Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.36-41

2021

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Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4842-4846

2021

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Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5559-5564

2021

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Drain-Bias-Dependent Study of Reverse Gate-Leakage Current in AlGaN/GaN HFETs

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.503-509

2021

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Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.24-28

2021

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Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode With Optimized Barrier Thickness for Zero-Bias Microwave Mixer

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.828-833

2020

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1778-1783

2021

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Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2557-2562

2019

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Investigation of Thin-Barrier AlGaN/GaN HEMT Heterostructures for Enhanced Gas-Sensing Performance

IEEE sensors journal, 2022-10, Vol.22 (19), p.18306-18312

2022

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Modeling of Short-Channel Effects in GaN HEMTs

Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs

Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure

Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability

Investigation of Electron Effective Mass in AlGaN/GaN Heterostructures by THz Spectroscopy of Drude Conductivity

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination

Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors

Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

Ultra-High-Q Gallium Nitride SAW Resonators for Applications With Extreme Temperature Swings

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors With Enhanced Performance

Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

A Reconfigurable Surface Acoustic Wave Filter on ZnO/AlGaN/GaN Heterostructure

A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact

Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics

Drain-Bias-Dependent Study of Reverse Gate-Leakage Current in AlGaN/GaN HFETs

Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer

Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode With Optimized Barrier Thickness for Zero-Bias Microwave Mixer

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric

Investigation of Thin-Barrier AlGaN/GaN HEMT Heterostructures for Enhanced Gas-Sensing Performance

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