UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique

Materials science forum, 2010, Vol.645-648, p.55-58

2010

Volltextzugriff (PDF)

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

Materials science forum, 2010, Vol.645-648, p.63-66

2010

Volltextzugriff (PDF)

Dislocation-Induced Birefringence in Silicon Carbide

Materials science forum, 2009, Vol.615-617, p.271-274

2009

Volltextzugriff (PDF)

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

Materials science forum, 2011, Vol.679-680, p.169-172

2011

Volltextzugriff (PDF)

Characterization of Bulk 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

Materials science forum, 2006, Vol.527-529, p.99-102

2006

Volltextzugriff (PDF)

Characterization of bulk < 111 > 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

Materials science forum, 2006, Vol.527-529, p.99-102

2006

Volltextzugriff (PDF)

Local-global background modeling for anomaly detection in hyperspectral images

2009 First Workshop on Hyperspectral Image and Signal Processing: Evolution in Remote Sensing, 2009, p.1-4

2009

Volltextzugriff (PDF)

Integration of Multi-Level Copper Metallization into a High Performance Sub-0.25μM Technology

MRS proceedings, 1998, Vol.514, Article 41

1998

Volltextzugriff (PDF)

Integration of NiSi SALICIDE for Deep Submicron CMOS Technologies

MRS proceedings, 1998, Vol.514, Article 179

1998

Volltextzugriff (PDF)

Copper Ulsi Interconnect Technology

MRS proceedings, 1998, Vol.514, Article 39

Edelstein, D.

1998

Volltextzugriff (PDF)

Carbon Nanotubes: Molecular Electronic Devices and Interconnects

MRS proceedings, 1998, Vol.514, Article 471

1998

Volltextzugriff (PDF)

Effect of Oxygen on the Degradation of Ti-Si-N Diffusion Barriers in Cu Metallization

MRS proceedings, 1998, Vol.514, Article 321

1998

Volltextzugriff (PDF)

Mocvd of Copper from the Solution of New and Liquid Precursor (hfac)Cu(1-pentene)

MRS proceedings, 1998, Vol.514, Article 301

1998

Volltextzugriff (PDF)

Optimizing Sputtered Tin ARC Film Properties for Lithography of Sub-0.25μm Interconnect

MRS proceedings, 1998, Vol.514, Article 539

1998

Volltextzugriff (PDF)

Analysis of Copper and Low-K Dielectric Interconnect System for 0.18-μm Technology

MRS proceedings, 1998, Vol.514, Article 399

1998

Volltextzugriff (PDF)

Novel Diffusion Barrier with Ultra-Thin Silicon Nitride Cap Layer

MRS proceedings, 1998, Vol.514, Article 507

1998

Volltextzugriff (PDF)

Study of Factor and Interaction Effects During Programmed Rate Chemical Vapor Deposition of Aluminum

MRS proceedings, 1998, Vol.514, Article 121

1998

Volltextzugriff (PDF)

Growth and Characterization of Rare-Earth Phosphide/Arsenide Schottky Contacts to GaAs

MRS proceedings, 1998, Vol.514, Article 453

1998

Volltextzugriff (PDF)

The Effect of Impurities in Tin Film When Used As Mos Gate Electrodes

MRS proceedings, 1998, Vol.514, Article 343

1998

Volltextzugriff (PDF)

Effect of Boron on Diffusion Barrier Characteristics of Pecvd W-B-N Films

MRS proceedings, 1998, Vol.514, Article 417

1998

Volltextzugriff (PDF)

Simulators of Thin Film Deposition for Silicon Device Processing

MRS proceedings, 1998, Vol.514, Article 119

1998

Volltextzugriff (PDF)

Process Design & Integration of Salicide and Source/Drain process Modules for Improved Device Performance

MRS proceedings, 1998, Vol.514, Article 251

1998

Volltextzugriff (PDF)

Low Temperature CVD Route to Binary and Ternary Diffusion Barrier Nitrides for Cu Metallization

MRS proceedings, 1998, Vol.514, Article 499

1998

Volltextzugriff (PDF)

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Applied surface science, 2003, Vol.212-13, p.177-183

2003

Volltextzugriff (PDF)

1 – 25 von 26

Suche als RSS-Feed

Aktive Filter

PublikationsformTagungsberichte

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(9)
Mit Volltextzugriff
(10)

Sprache

Englisch
(26)

Erscheinungsjahr

n.n

Thema

Materials Science
(23)
Science & Technology
(22)
Technology
(22)
Materials Science, Multidisciplinary
(20)
Engineering
(19)
Engineering, Electrical & Electronic
(18)
Materials Science, Coatings & Films
(16)
Chemical Sciences
(4)
Material Chemistry
(4)
Physics
(4)
3c-Sic
(3)
Cf-Pvt
(2)
Exact Sciences And Technology
(2)
Materials Science, Ceramics
(2)
Materials Science, Composites
(2)
3c-Sic Crystals
(1)
Anisotropic Elasticity
(1)
Background Modeling
(1)
Birefringence
(1)
Bulk 3c-Sic
(1)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Menü

Weitere Dienste

Einstellungen

Top Seeded Solution Growth of 3C-SiC Single Crystals

Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

Dislocation-Induced Birefringence in Silicon Carbide

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

Characterization of Bulk 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

Characterization of bulk < 111 > 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

Local-global background modeling for anomaly detection in hyperspectral images

Integration of Multi-Level Copper Metallization into a High Performance Sub-0.25μM Technology

Integration of NiSi SALICIDE for Deep Submicron CMOS Technologies

Copper Ulsi Interconnect Technology

Carbon Nanotubes: Molecular Electronic Devices and Interconnects

Effect of Oxygen on the Degradation of Ti-Si-N Diffusion Barriers in Cu Metallization

Mocvd of Copper from the Solution of New and Liquid Precursor (hfac)Cu(1-pentene)

Optimizing Sputtered Tin ARC Film Properties for Lithography of Sub-0.25μm Interconnect

Analysis of Copper and Low-K Dielectric Interconnect System for 0.18-μm Technology

Novel Diffusion Barrier with Ultra-Thin Silicon Nitride Cap Layer

Study of Factor and Interaction Effects During Programmed Rate Chemical Vapor Deposition of Aluminum

Growth and Characterization of Rare-Earth Phosphide/Arsenide Schottky Contacts to GaAs

The Effect of Impurities in Tin Film When Used As Mos Gate Electrodes

Effect of Boron on Diffusion Barrier Characteristics of Pecvd W-B-N Films

Simulators of Thin Film Deposition for Silicon Device Processing

Process Design & Integration of Salicide and Source/Drain process Modules for Improved Device Performance

Low Temperature CVD Route to Binary and Ternary Diffusion Barrier Nitrides for Cu Metallization

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Aktive Filter

Suchergebnisse filtern