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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Nano letters, 2017-02, Vol.17 (2), p.1049-1055

2017

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of applied physics, 2015-04, Vol.117 (13)

2015

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Toward Smart and Ultra‐efficient Solid‐State Lighting

Advanced optical materials, 2014-09, Vol.2 (9), p.809-836

2014

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Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Optics express, 2011-12, Vol.19 (25), p.25528-25534

2011

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Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

Nano letters, 2013-09, Vol.13 (9), p.4317-4325

2013

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Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well

Nature, 2004-06, Vol.429 (6992), p.642-646

2004

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Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

Nano letters, 2006-07, Vol.6 (7), p.1396-1400

2006

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Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells

Applied physics letters, 2015-07, Vol.107 (2)

2015

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Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Nano letters, 2014-10, Vol.14 (10), p.5616-5620

2014

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Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

AIP advances, 2017-10, Vol.7 (10), p.105312-105312-7

2017

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Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths

Advanced materials (Weinheim), 2010-01, Vol.22 (4), p.487-491

2010

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III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Optical materials express, 2018-11, Vol.8 (11), p.3543

2018

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Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Applied physics letters, 2012-12, Vol.101 (24)

2012

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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Applied physics letters, 2009-02, Vol.94 (8), p.081113-081113-3

2009

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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Applied physics letters, 2010-09, Vol.97 (13), p.133507-133507-3

2010

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Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

Applied physics letters, 2010-04, Vol.96 (15), p.153501-153501-3

2010

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Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Applied physics letters, 2007-12, Vol.91 (23)

2007

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III-nitride core-shell nanowire arrayed solar cells

Nanotechnology, 2012-05, Vol.23 (19), p.194007-1-6

2012

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Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy

Journal of crystal growth, 2017-04, Vol.464, p.190-196

2017

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Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Nano letters, 2013-11, Vol.13 (11), p.5123-5128

2013

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Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers

Nano letters, 2005-06, Vol.5 (6), p.1039-1044

2005

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Genetic Algorithm for Innovative Device Designs in High-Efficiency III–V Nitride Light-Emitting Diodes

Applied physics express, 2012-01, Vol.5 (1), p.12102

2012

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Ultrafast and band-selective Auger recombination in InGaN quantum wells

Applied physics letters, 2016-04, Vol.108 (14)

2016

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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Applied physics letters, 2011-01, Vol.98 (3), p.033506-033506-3

2011

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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Toward Smart and Ultra‐efficient Solid‐State Lighting

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well

Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1−xN quantum wells

Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Log-Pile TiO2 Photonic Crystal for Light Control at Near-UV and Visible Wavelengths

III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

III-nitride core-shell nanowire arrayed solar cells

Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers

Genetic Algorithm for Innovative Device Designs in High-Efficiency III–V Nitride Light-Emitting Diodes

Ultrafast and band-selective Auger recombination in InGaN quantum wells

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

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