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Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

Materials science forum, 2015-06, Vol.821-823, p.834-837

2015

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A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance

Materials science forum, 2020-07, Vol.1004, p.306-313

2020

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Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Materials science forum, 2022-05, Vol.1062, p.613-618

2022

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Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs

Materials Science Forum, 2016-05, Vol.858, p.958-961

2016

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Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power Supply

Materials science forum, 2020-07, Vol.1004, p.1129-1133

2020

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High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET

Materials science forum, 2020-07, Vol.1004, p.1115-1122

2020

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4.5 kV SiC Junction Barrier Schottky diodes with low leakage current and high forward current density

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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650V SiC cascode: A breakthrough for wide-bandgap switches

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 673

2017

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Demonstration of 13-kV class junction barrier Schottky diodes in 4H-SiC with three-zone junction termination extension

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

Materials science forum, 2020-11, Vol.1014, p.62-67

2020

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TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors

Materials science forum, 2019-07, Vol.963, p.670-673

2019

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High temperature bipolar master-slave comparator and frequency divider in 4H-SiC technology

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 681

2017

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Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier

Materials science forum, 2020-07, Vol.1004, p.1081-1087

2020

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Collector conductivity modulation in 1200-V 4H-SiC BJTs (Modeling)

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Very high sustainable forward current densities on 4H-SiC p-n junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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ECL-Based SiC Logic Circuits for Extreme Temperatures

Materials science forum, 2015-06, Vol.821-823, p.910-913

2015

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0.97 mΩcm2/820 V 4H-SiC super junction V-groove trench MOSFET

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

Materials science forum, 2020-07, Vol.1004, p.464-471

2020

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1200V SiC Trench-MOSFET optimized for high reliability and high performance

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Materials science forum, 2020-07, Vol.1004, p.1066-1073, Article 1066

2020

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150mm Silicon carbide selective embedded epitaxial growth technology by CVD

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge

Materials science forum, 2019-05, Vol.954, p.151-156

2019

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs

Materials Science Forum, 2016-05, Vol.858, p.807-811

2016

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Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Materials science forum, 2020-07, Vol.1004, p.923-932

2020

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Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges

A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance

Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs

Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power Supply

High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET

4.5 kV SiC Junction Barrier Schottky diodes with low leakage current and high forward current density

650V SiC cascode: A breakthrough for wide-bandgap switches

Demonstration of 13-kV class junction barrier Schottky diodes in 4H-SiC with three-zone junction termination extension

SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors

High temperature bipolar master-slave comparator and frequency divider in 4H-SiC technology

Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier

Collector conductivity modulation in 1200-V 4H-SiC BJTs (Modeling)

Very high sustainable forward current densities on 4H-SiC p-n junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters

ECL-Based SiC Logic Circuits for Extreme Temperatures

0.97 mΩcm2/820 V 4H-SiC super junction V-groove trench MOSFET

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

1200V SiC Trench-MOSFET optimized for high reliability and high performance

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

150mm Silicon carbide selective embedded epitaxial growth technology by CVD

An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge

Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

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