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Monte Carlo simulation study of electron yields from compound semiconductor materials

Journal of applied physics, 2020-07, Vol.128 (1)

2020

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Theoretical calculations of the mean escape depth of secondary electron emission from compound semiconductor materials

Journal of applied physics, 2020-03, Vol.127 (12)

2020

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Thermal transport properties of suspended graphene

Journal of applied physics, 2018-07, Vol.124 (4)

2018

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Spin dynamics, electronic, and thermal transport properties of two-dimensional CrPS4 single crystal

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

Journal of applied physics, 2015-02, Vol.117 (7)

2015

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Identifying crystal structures and chemical reactions at the interface of stanene on Bi2Te3

Journal of applied physics, 2020-10, Vol.128 (16)

2020

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Thermal conductivity of GaN films: Effects of impurities and dislocations

Journal of applied physics, 2002-09, Vol.92 (5), p.2534-2539

2002

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Electronic structure and thermoelectric properties of half-Heusler Zr0.5Hf0.5NiSn by first-principles calculations

Journal of applied physics, 2013-05, Vol.113 (19)

2013

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Enhanced thermoelectric performance via carrier energy filtering effect in β-Zn4Sb3 alloy bulk embedded with (Bi2Te3)0.2(Sb2Te3)0.8

Journal of applied physics, 2014-02, Vol.115 (5)

2014

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Structural phase transition of BaZrO3 under high pressure

Journal of applied physics, 2014-03, Vol.115 (12)

2014

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Magnetocaloric effects in the La ( Fe , Si ) 13 intermetallics doped by different elements

Journal of applied physics, 2009-02, Vol.105 (7), p.07A924-07A924-3

2009

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Influence of 3d transition metals on the stability and electronic structure of MgH2

Journal of applied physics, 2012-01, Vol.111 (9)

2012

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Effects of substrate on structure and the magnetic properties of (001)-textured FePt films grown at low temperature

Journal of applied physics, 2012-04, Vol.111 (7), p.07A704-07A704-3

2012

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High-pressure Raman scattering and x-ray diffraction of phase transitions in MoO3

Journal of applied physics, 2009-01, Vol.105 (2)

2009

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Identifying crystal structures and chemical reactions at the interface of stanene on Bi 2 Te 3

Journal of applied physics, 2020-10, Vol.128 (16)

2020

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Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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High-energy-density electron jet generation from an opening gold cone filled with near-critical-density plasma

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Journal of applied physics, 2009-10, Vol.106 (8), p.083514-083514-4

2009

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Ferromagnetism in Tb doped ZnO nanocrystalline films

Journal of applied physics, 2012-06, Vol.111 (11), p.113704-113704-4

2012

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Lattice damage produced in GaN by swift heavy ions

Journal of applied physics, 2004-05, Vol.95 (10), p.5360-5365

2004

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Magnetic nanowires for acoustic sensors (invited)

Journal of applied physics, 2006-04, Vol.99 (8), p.08B310-08B310-6

2006

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A study on the orientation relationship between the scallop-type Cu6Sn5 grains and (011) Cu substrate using electron backscattered diffraction

Journal of applied physics, 2009-12, Vol.106 (11)

2009

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Nonlocal spin valves with thin Co electrodes for spin-transfer

Journal of applied physics, 2010-08, Vol.108 (3), p.033905-033905-4

2010

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Pressure-induced amorphization in orthorhombic Ta2O5: An intrinsic character of crystal

Journal of applied physics, 2014-05, Vol.115 (19)

2014

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Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Journal of applied physics, 2009-10, Vol.106 (7)

2009

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Monte Carlo simulation study of electron yields from compound semiconductor materials

Theoretical calculations of the mean escape depth of secondary electron emission from compound semiconductor materials

Thermal transport properties of suspended graphene

Spin dynamics, electronic, and thermal transport properties of two-dimensional CrPS4 single crystal

Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

Identifying crystal structures and chemical reactions at the interface of stanene on Bi2Te3

Thermal conductivity of GaN films: Effects of impurities and dislocations

Electronic structure and thermoelectric properties of half-Heusler Zr0.5Hf0.5NiSn by first-principles calculations

Enhanced thermoelectric performance via carrier energy filtering effect in β-Zn4Sb3 alloy bulk embedded with (Bi2Te3)0.2(Sb2Te3)0.8

Structural phase transition of BaZrO3 under high pressure

Magnetocaloric effects in the La ( Fe , Si ) 13 intermetallics doped by different elements

Influence of 3d transition metals on the stability and electronic structure of MgH2

Effects of substrate on structure and the magnetic properties of (001)-textured FePt films grown at low temperature

High-pressure Raman scattering and x-ray diffraction of phase transitions in MoO3

Identifying crystal structures and chemical reactions at the interface of stanene on Bi 2 Te 3

Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

High-energy-density electron jet generation from an opening gold cone filled with near-critical-density plasma

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Ferromagnetism in Tb doped ZnO nanocrystalline films

Lattice damage produced in GaN by swift heavy ions

Magnetic nanowires for acoustic sensors (invited)

A study on the orientation relationship between the scallop-type Cu6Sn5 grains and (011) Cu substrate using electron backscattered diffraction

Nonlocal spin valves with thin Co electrodes for spin-transfer

Pressure-induced amorphization in orthorhombic Ta2O5: An intrinsic character of crystal

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

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