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Convective solution transport - An improved technique for the growth of big crystals of the superconducting α-FeSe using KCl as solvent

Journal of applied physics, 2011-12, Vol.110 (11), p.113919-113919-6

2011

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Publisher's Note: "Convective solution transport-An improved technique for the growth of big crystals of the superconducting α-FeSe using KCl as solvent" [ J. Appl. Phys. 110 , 113919 ( 2011 ) ]

Journal of applied physics, 2012-04, Vol.111 (8), p.089902-089902-1

2012

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Convective solution transport -- An improved technique for the growth of big crystals of the superconducting {alpha}-FeSe using KCl as solvent

Journal of applied physics, 2011-12, Vol.110 (11)

2011

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Stimulated emission and lasing of random-growth oriented ZnO nanowires

Journal of applied physics, 2005-03, Vol.97 (6), p.064315-064315-4

2005

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Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Journal of applied physics, 2013-11, Vol.114 (20)

2013

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Perpendicular exchange bias behaviors of CoPt/IrMn and CoPt/FeMn bilayers: A comparative study

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Study on the occurrence of spontaneously established perpendicular exchange bias in Co49Pt51/IrMn bilayers

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Dye-sensitized solar cells using ZnO tetrapods

Journal of applied physics, 2008-04, Vol.103 (8), p.083114-083114-4

2008

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Impact of active layer design on InGaN radiative recombination coefficient and LED performance

Journal of applied physics, 2012-03, Vol.111 (6), p.063112-063112-8

2012

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Ferromagnetism in Tb doped ZnO nanocrystalline films

Journal of applied physics, 2012-06, Vol.111 (11), p.113704-113704-4

2012

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Study on the occurrence of spontaneously established perpendicular exchange bias in Co{sub 49}Pt{sub 51}/IrMn bilayers

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Superconductivity up to 10 K in the Sr(Pd1− x Pt x )2Ge2 layer system

Journal of applied physics, 2013-06, Vol.113 (21)

2013

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Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces

Journal of applied physics, 2009-07, Vol.106 (1), p.013701-013701-5

2009

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Enhanced thermoelectric figure-of-merit ZT for hole-doped Bi 2 Sr 2 Co 2 O y through Pb substitution

Journal of applied physics, 2012-05, Vol.111 (10), p.103709-103709-5

2012

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Enhanced thermoelectric figure-of-merit ZT for hole-doped Bi2Sr2Co2O y through Pb substitution

Journal of applied physics, 2012-05, Vol.111 (10)

2012

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Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN

Journal of applied physics, 2004-11, Vol.96 (9), p.4930-4934

2004

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Erratum: “Electrical properties of ZnO nanorods studied by conductive atomic force microscopy” [J. Appl. Phys. 110, 052005 (2011)]

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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Publisher's Note: "Impact of active layer design on InGaN radiative recombination coefficient and LED performance" [ J. Appl. Phys. 111 , 063112 ( 2012 ) ]

Journal of applied physics, 2012-05, Vol.111 (9), p.099905-099905-1

2012

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Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect state

Journal of applied physics, 2009-03, Vol.105 (6), p.063705-063705-9

2009

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Spin-degenerate surface and the resonant spin lifetime transistor in wurtzite structures

Journal of applied physics, 2010-10, Vol.108 (8), p.083718-083718-4

2010

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Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe48Pt52 films

Journal of applied physics, 2009-04, Vol.105 (7)

2009

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Thickness dependent spin-injection effects in Nd0.7Ca0.3MnO3∕YBa2Cu3O7 bilayers

Journal of applied physics, 2008-04, Vol.103 (7)

2008

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Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe{sub 48}Pt{sub 52} films

Journal of applied physics, 2009-04, Vol.105 (7)

2009

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Role of interfacial roughness on bias-dependent magnetoresistance and transport properties in magnetic tunnel junctions

Journal of applied physics, 2005-11, Vol.98 (10), p.103504-103504-3

2005

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Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe 48 Pt 52 films

Journal of applied physics, 2009-03, Vol.105 (7), p.07B719-07B719-3

2009

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Convective solution transport - An improved technique for the growth of big crystals of the superconducting α-FeSe using KCl as solvent

Publisher's Note: "Convective solution transport-An improved technique for the growth of big crystals of the superconducting α-FeSe using KCl as solvent" [ J. Appl. Phys. 110 , 113919 ( 2011 ) ]

Convective solution transport -- An improved technique for the growth of big crystals of the superconducting {alpha}-FeSe using KCl as solvent

Stimulated emission and lasing of random-growth oriented ZnO nanowires

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Perpendicular exchange bias behaviors of CoPt/IrMn and CoPt/FeMn bilayers: A comparative study

Study on the occurrence of spontaneously established perpendicular exchange bias in Co49Pt51/IrMn bilayers

Dye-sensitized solar cells using ZnO tetrapods

Impact of active layer design on InGaN radiative recombination coefficient and LED performance

Ferromagnetism in Tb doped ZnO nanocrystalline films

Study on the occurrence of spontaneously established perpendicular exchange bias in Co{sub 49}Pt{sub 51}/IrMn bilayers

Superconductivity up to 10 K in the Sr(Pd1− x Pt x )2Ge2 layer system

Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces

Enhanced thermoelectric figure-of-merit ZT for hole-doped Bi 2 Sr 2 Co 2 O y through Pb substitution

Enhanced thermoelectric figure-of-merit ZT for hole-doped Bi2Sr2Co2O y through Pb substitution

Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN

Erratum: “Electrical properties of ZnO nanorods studied by conductive atomic force microscopy” [J. Appl. Phys. 110, 052005 (2011)]

Publisher's Note: "Impact of active layer design on InGaN radiative recombination coefficient and LED performance" [ J. Appl. Phys. 111 , 063112 ( 2012 ) ]

Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect state

Spin-degenerate surface and the resonant spin lifetime transistor in wurtzite structures

Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe48Pt52 films

Thickness dependent spin-injection effects in Nd0.7Ca0.3MnO3∕YBa2Cu3O7 bilayers

Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe{sub 48}Pt{sub 52} films

Role of interfacial roughness on bias-dependent magnetoresistance and transport properties in magnetic tunnel junctions

Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe 48 Pt 52 films

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