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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Acta materialia, 2013-02, Vol.61 (3), p.945-951

2013

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Semipolar (}\bar}}\bar}}) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Journal of display technology, 2013-04, Vol.9 (4), p.190-198

2013

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Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

Thin solid films, 2016-04, Vol.605, p.186-192

2016

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Improved growth rates and purity of basic ammonothermal GaN

Journal of crystal growth, 2014-10, Vol.403, p.7-17

2014

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High-power AlGaN/GaN HEMTs for Ka-band applications

IEEE electron device letters, 2005-11, Vol.26 (11), p.781-783

2005

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On the solubility of gallium nitride in supercritical ammonia–sodium solutions

Journal of crystal growth, 2016-12, Vol.456, p.5-14

2016

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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Nature materials, 2006-10, Vol.5 (10), p.810-816

2006

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Efficacy of sodium hypochlorite against multidrug-resistant Gram-negative bacteria

The Journal of hospital infection, 2018-11, Vol.100 (3), p.e40-e46

2018

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Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN

Journal of crystal growth, 2016-12, Vol.456, p.43-50

2016

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Disorder effects in nitride semiconductors: impact on fundamental and device properties

Nanophotonics (Berlin, Germany), 2020-11, Vol.10 (1), p.3-21

2020

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Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave

Journal of crystal growth, 2016-12, Vol.456, p.21-26

2016

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Progress of InGaN-Based Red Micro-Light Emitting Diodes

Crystals (Basel), 2022-04, Vol.12 (4), p.541

2022

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Comparison of four commercially available point-of-care tests to detect antibodies against canine distemper virus in dogs

The veterinary journal (1997), 2021-07, Vol.273, p.105693-105693, Article 105693

2021

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MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

APL materials, 2019-02, Vol.7 (2), p.022506-022506-6

2019

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A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes

Journal of crystal growth, 2016-12, Vol.456, p.67-72

2016

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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Journal of crystal growth, 2013-11, Vol.382, p.80-86

2013

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Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

AIP advances, 2021-09, Vol.11 (9), p.095119-095119-8

2021

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Prospects for LED lighting

Nature photonics, 2009-04, Vol.3 (4), p.180-182

2009

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Faecal shedding of canine parvovirus after modified-live vaccination in healthy adult dogs

The veterinary journal (1997), 2017-01, Vol.219, p.15-21

2017

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Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy

Journal of crystal growth, 2013-04, Vol.369, p.14-20

2013

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Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition

Journal of crystal growth, 2017-10, Vol.475, p.127-135

2017

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Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio

Crystals (Basel), 2021-08, Vol.11 (8), p.1006

2021

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Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon

Crystals (Basel), 2022-08, Vol.12 (9), p.1216

2022

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Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane

Journal of crystal growth, 2013-04, Vol.368, p.67-71

2013

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Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

Crystals (Basel), 2022-05, Vol.12 (5), p.721

2022

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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Semipolar (}\bar}}\bar}}) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

Improved growth rates and purity of basic ammonothermal GaN

High-power AlGaN/GaN HEMTs for Ka-band applications

On the solubility of gallium nitride in supercritical ammonia–sodium solutions

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Efficacy of sodium hypochlorite against multidrug-resistant Gram-negative bacteria

Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN

Disorder effects in nitride semiconductors: impact on fundamental and device properties

Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave

Progress of InGaN-Based Red Micro-Light Emitting Diodes

Comparison of four commercially available point-of-care tests to detect antibodies against canine distemper virus in dogs

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Prospects for LED lighting

Faecal shedding of canine parvovirus after modified-live vaccination in healthy adult dogs

Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy

Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition

Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio

Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon

Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane

Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

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