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Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit

IEEE transactions on power electronics, 2024-02, Vol.39 (2), p.2351-2359

2024

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Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High VDS

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3462-3467

2023

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TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5584-5589

2023

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Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3630-3635

2022

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Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High V DS

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3462-3467

2023

Volltextzugriff (PDF)

600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

IEEE electron device letters, 2023-02, Vol.44 (2), p.225-228

2023

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Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.484-489

2024

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An Actively-Passivated p-GaN Gate HEMT with Screening Effect against Surface Traps

IEEE electron device letters, 2023-01, Vol.44 (1), p.1-1

2023

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Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.111-114

2023

Volltextzugriff (PDF)

Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.534-537

2024

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High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.378-381

2023

Volltextzugriff (PDF)

Partial discharge of white noise suppression method based on EEMD and higher order statistics

Journal of engineering (Stevenage, England), 2017, Vol.2017 (13), p.2043-2047

2017

Volltextzugriff (PDF)

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

Dielectric Strength of Ethylene Propylene Rubber under Thermal and Mechanical Stress

2020 IEEE International Conference on High Voltage Engineering and Application (ICHVE), 2020, p.1-4

2020

Volltextzugriff (PDF)

Development of protection device for anti-override trip based on optical fiber locking control

2017 6th Data Driven Control and Learning Systems (DDCLS), 2017, p.479-483

2017

Volltextzugriff (PDF)

AC flashover performance and polarization current of ethylene propylene rubber under different temperature

2017 1st International Conference on Electrical Materials and Power Equipment (ICEMPE), 2017, p.393-396

2017

Volltextzugriff (PDF)

Investigation on the partial discharge of the cavity in Nomex insulation for mining dry type transformer

2018 12th International Conference on the Properties and Applications of Dielectric Materials (ICPADM), 2018, p.525-529

2018

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Multi-fault Diagnosis Information Fusion

2009 International Conference on New Trends in Information and Service Science, 2009, p.127-130

2009

Volltextzugriff (PDF)

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Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit

Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High VDS

TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT

Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High V DS

600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping

An Actively-Passivated p-GaN Gate HEMT with Screening Effect against Surface Traps

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in p-GaN Gate HEMT under Room/High Temperatures

Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT

Partial discharge of white noise suppression method based on EEMD and higher order statistics

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Dielectric Strength of Ethylene Propylene Rubber under Thermal and Mechanical Stress

Development of protection device for anti-override trip based on optical fiber locking control

AC flashover performance and polarization current of ethylene propylene rubber under different temperature

Investigation on the partial discharge of the cavity in Nomex insulation for mining dry type transformer

Multi-fault Diagnosis Information Fusion

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