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The development of heterojunction integrated injection logic

IEEE transactions on electron devices, 1989-10, Vol.36 (10), p.2083-2092

1989

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IVA-3 GaAs/AlGaAs heterojunction emitter-down bipolar circuits fabricated on GaAs-on-Si substrates

IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2369-2370

1987

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Properties of interconnection on silicon, sapphire, and semi-insulating gallium arsenide substrates

IEEE transactions on electron devices, 1982-04, Vol.29 (4), p.639-644

1982

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A 2-watt X-band silicon power transistor

IEEE transactions on electron devices, 1978-06, Vol.25 (6), p.731-736

1978

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A Unified Analytic Drain-Current Model for Multiple-Gate MOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2157-2163

2008

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Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3668-3671

2017

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Scaling of Nanowire Transistors

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2846-2858

2008

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A Two-Dimensional Analytical Solution for Short-Channel Effects in Nanowire MOSFETs

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2357-2362

2009

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Fabrication of Field Emission Device With Lateral-Cathode Triode for Lighting Applications

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5755-5759

2020

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Analytic Charge Model for Surrounding-Gate MOSFETs

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.492-496

2007

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Improved Electrical and Thermal Stability of Solution-Processed Li-Doped ZnO Thin-Film Transistors

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.700-704, Article 700

2012

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Single-ZnO-Nanowire Memory

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1735-1740

2011

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Ultrasensitive and High-Speed Ga2O3 Solar-Blind Photodetection Based on Defect Engineering

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4236-4242

2023

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Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3176-3180

2021

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On the scaling limit of ultrathin SOI MOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1137-1141

2006

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ZnO Nanorod Humidity Sensor and Dye-Sensitized Solar Cells as a Self-Powered Device

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3978-3981

2019

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Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and Experiments

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2331-2337

2013

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Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3342-3345

2016

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Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4489-4497

2024

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A New Method to Correlate Human Body Model and Transmission Line Pulse Based on RC Thermal Equivalent Model

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.1-6

2020

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An analytic potential model for symmetric and asymmetric DG MOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1161-1168

2006

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Investigation of Endurance Behavior on HfZrO-Based Charge-Trapping FinFET Devices by Random Telegraph Noise and Subthreshold Swing Techniques

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3716-3719

2021

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Short-Channel Effects in Tunnel FETs

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.3019-3024

2015

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A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.109-114

2022

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Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2233-2239

2021

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The development of heterojunction integrated injection logic

IVA-3 GaAs/AlGaAs heterojunction emitter-down bipolar circuits fabricated on GaAs-on-Si substrates

Properties of interconnection on silicon, sapphire, and semi-insulating gallium arsenide substrates

A 2-watt X-band silicon power transistor

A Unified Analytic Drain-Current Model for Multiple-Gate MOSFETs

Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters

Scaling of Nanowire Transistors

A Two-Dimensional Analytical Solution for Short-Channel Effects in Nanowire MOSFETs

Fabrication of Field Emission Device With Lateral-Cathode Triode for Lighting Applications

Analytic Charge Model for Surrounding-Gate MOSFETs

Improved Electrical and Thermal Stability of Solution-Processed Li-Doped ZnO Thin-Film Transistors

Single-ZnO-Nanowire Memory

Ultrasensitive and High-Speed Ga2O3 Solar-Blind Photodetection Based on Defect Engineering

Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process

On the scaling limit of ultrathin SOI MOSFETs

ZnO Nanorod Humidity Sensor and Dye-Sensitized Solar Cells as a Self-Powered Device

Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and Experiments

Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain

Modeling of Electrostatics and Currents in a Forward-Biased p-n Junction

A New Method to Correlate Human Body Model and Transmission Line Pulse Based on RC Thermal Equivalent Model

An analytic potential model for symmetric and asymmetric DG MOSFETs

Investigation of Endurance Behavior on HfZrO-Based Charge-Trapping FinFET Devices by Random Telegraph Noise and Subthreshold Swing Techniques

Short-Channel Effects in Tunnel FETs

A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure

Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs

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