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Optimization of SiGe bandgap-based circuits for up to 300°C operation

Solid-state electronics, 2011-02, Vol.56 (1), p.47-55

2011

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Design of single and multiple zone junction termination extension structures for SiC power devices

Solid-state electronics, 2001-09, Vol.45 (9), p.1659-1664

2001

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Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K

Solid-state electronics, 1996-06, Vol.39 (6), p.777-784

1996

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Evidence for non-equilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures

Solid-state electronics, 1996, Vol.39 (6), p.785-789

1996

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Optimization of SiGe bandgap-based circuits for up to 300 degree C operation

Solid-state electronics, 2011-02, Vol.56 (1), p.47-55

2011

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Design and fabrication of planar guard ring termination for high-voltage SiC diodes

Solid-state electronics, 2000-08, Vol.44 (8), p.1367-1372

2000

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Explicit formulation of a series resistance correction procedure for MOSFET parameter extraction and its accuracy analysis

Solid-state electronics, 1998-06, Vol.42 (6), p.1057-1058

1998

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Proton and gamma radiation effects in a new first-generation SiGe HBT technology

Solid-state electronics, 2006-02, Vol.50 (2), p.181-190

2006

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The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

Solid-state electronics, 2002-12, Vol.46 (12), p.2231-2235

2002

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On the optimization and design of SiGe HBT cascode low-noise amplifiers

Solid-state electronics, 2005-03, Vol.49 (3), p.329-341

2005

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The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

Solid-state electronics, 2005-06, Vol.49 (6), p.986-990

2005

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The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's

Solid-state electronics, 1999-12, Vol.43 (12), p.2225-2230

1999

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A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology

Solid-state electronics, 2000-11, Vol.44 (11), p.1949-1954

2000

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The effect of carbon content on the minority carrier lifetime in lattice-matched p+-Si/ p-SiGeC/ n-Si/ n+-Si diodes

Solid-state electronics, 2000-03, Vol.44 (3), p.559-563

2000

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A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Solid-state electronics, 2000-07, Vol.44 (7), p.1187-1189

2000

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Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect

Solid-state electronics, 2000-08, Vol.44 (8), p.1507-1509

2000

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Low-frequency noise in buried-channel SiGe n-MODFETs

Solid-state electronics, 2009-08, Vol.53 (8), p.901-904

2009

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The effects of operating bias conditions on the proton tolerance of SiGe HBTs

Solid-state electronics, 2003-10, Vol.47 (10), p.1729-1734

2003

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Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs

Solid-state electronics, 2003, Vol.47 (1), p.39-44

2003

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The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

Solid-state electronics, 2003-06, Vol.47 (6), p.1111-1115

2003

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Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs

Solid-state electronics, 2001, Vol.45 (1), p.107-112

2001

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Optimization of SiGe bandgap-based circuits for up to 300°C operation

Design of single and multiple zone junction termination extension structures for SiC power devices

Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K

Evidence for non-equilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures

Optimization of SiGe bandgap-based circuits for up to 300 degree C operation

Design and fabrication of planar guard ring termination for high-voltage SiC diodes

Explicit formulation of a series resistance correction procedure for MOSFET parameter extraction and its accuracy analysis

Proton and gamma radiation effects in a new first-generation SiGe HBT technology

The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

On the optimization and design of SiGe HBT cascode low-noise amplifiers

The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's

A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology

The effect of carbon content on the minority carrier lifetime in lattice-matched p+-Si/ p-SiGeC/ n-Si/ n+-Si diodes

A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect

Low-frequency noise in buried-channel SiGe n-MODFETs

The effects of operating bias conditions on the proton tolerance of SiGe HBTs

Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs

The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs

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