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Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Journal of electronic materials, 2021-06, Vol.50 (6), p.3258-3265

2021

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Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Materials science forum, 2020-07, Vol.1004, p.44-50

2020

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Impact of Subsurface Damage on SiC Wafer Shape

Materials science forum, 2019-07, Vol.963, p.530-533

2019

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Prismatic Slip in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2017-04, Vol.46 (4), p.2040-2044

2017

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Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Materials science forum, 2016-05, Vol.858, p.129-132

2016

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Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1910-1923

2010

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.565-571

2008

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Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner

Journal of applied physics, 2007-05, Vol.101 (9), p.093506-093506-7

2007

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SiC Substrate Doping Profiles Using Commercial Optical Scanners

Materials science forum, 2006-10, Vol.527-529, p.725-728

2006

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A comparative study of micropipe decoration and counting in conductive and semi-insulating silicon carbide wafers

Journal of electronic materials, 2005-10, Vol.34 (10), p.1342-1348

2005

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Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1582-1588

2003

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Effect of process variations and ambient temperature on electron mobility at the SiO(2)/4H-SiC interface

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1582-1588

2003

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Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1582

2003

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Effect of process variations and ambient temperature on electron mobility at the SiO sub(2)/4H-SiC interface

IEEE transactions on electron devices, 2003-01, Vol.50 (7)

2003

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The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

Solid-state electronics, 2002-12, Vol.46 (12), p.2231-2235

2002

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The effects of NO passivation on the radiation response of SiO 2/4H-SiC MOS capacitors

Solid-state electronics, 2002, Vol.46 (12), p.2231-2235

2002

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Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

MRS proceedings, 2002, Vol.719, Article F3.2

2002

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The effects of high-dose gamma irradiation on high-voltage 4H-SiCSchottky diodes and the SiC-SiO)2) interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

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The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

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The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

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The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO sub(2) interface

IEEE transactions on nuclear science, 2001-01, Vol.48 (6)

2001

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Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Applied physics letters, 2000-11, Vol.77 (22), p.3601-3603

2000

Volltextzugriff (PDF)

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Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Impact of Subsurface Damage on SiC Wafer Shape

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner

SiC Substrate Doping Profiles Using Commercial Optical Scanners

A comparative study of micropipe decoration and counting in conductive and semi-insulating silicon carbide wafers

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Effect of process variations and ambient temperature on electron mobility at the SiO(2)/4H-SiC interface

Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface

Effect of process variations and ambient temperature on electron mobility at the SiO sub(2)/4H-SiC interface

The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

The effects of NO passivation on the radiation response of SiO 2/4H-SiC MOS capacitors

Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

The effects of high-dose gamma irradiation on high-voltage 4H-SiCSchottky diodes and the SiC-SiO)2) interface

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO sub(2) interface

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

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