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Improvement of luminescence properties of n-GaN using TEGa precursor

Journal of crystal growth, 2020-02, Vol.531, p.125383, Article 125383

2020

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InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Journal of crystal growth, 2017-04, Vol.464, p.206-210

2017

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Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Applied physics letters, 2012-01, Vol.100 (3), p.031908-031908-3

2012

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Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Journal of physics. D, Applied physics, 2013-03, Vol.46 (9), p.095103-1-6

2013

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Applied surface science, 2014-07, Vol.306, p.89-93

2014

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Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Physica. B, Condensed matter, 2016-01, Vol.480, p.14-22

2016

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Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Thin solid films, 2013-09, Vol.543, p.83-87

2013

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Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Journal of crystal growth, 2013-05, Vol.370, p.303-306

2013

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Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Journal of applied physics, 2013-11, Vol.114 (17)

2013

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Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1343-1349

2017

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Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Journal of physics. Conference series, 2016-11, Vol.769 (1), p.12075

2016

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Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Surface science, 2010-02, Vol.604 (3), p.318-321

2010

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Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Physica. E, Low-dimensional systems & nanostructures, 2013-02, Vol.48, p.61-65

2013

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Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

Journal of crystal growth, 2011-01, Vol.315 (1), p.110-113

2011

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Diagnostic and characterization of the VCSEL diodes based on GaSb

Applied physics. B, Lasers and optics, 2010-04, Vol.99 (1-2), p.333-338

2010

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InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.175-178

2008

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Electro- and photoluminescence of InAs/GaAs quantum dot structures

Journal of physics. Conference series, 2010-09, Vol.245 (1), p.012080

2010

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Photovoltage spectroscopy of InAs/GaAs quantum dot structures

Journal of applied physics, 2002-06, Vol.91 (12), p.10103-10106

2002

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GaSb based lasers operating near 2.3 μm for high resolution absorption spectroscopy

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy, 2005-10, Vol.61 (13), p.3066-3069

2005

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Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

Applied physics letters, 2006-03, Vol.88 (13)

2006

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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.66-71

2010

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Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

Journal of crystal growth, 2007, Vol.298, p.570-573

2007

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Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

Physica. E, Low-dimensional systems & nanostructures, 2007-01, Vol.36 (1), p.106-113

2007

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Improvement of luminescence properties of n-GaN using TEGa precursor

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

Diagnostic and characterization of the VCSEL diodes based on GaSb

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

Electro- and photoluminescence of InAs/GaAs quantum dot structures

Photovoltage spectroscopy of InAs/GaAs quantum dot structures

GaSb based lasers operating near 2.3 μm for high resolution absorption spectroscopy

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

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