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Prospects for β-Ga2O3: now and into the future

Applied physics express, 2024-09, Vol.17 (9), p.090101

Sasaki, Kohei

2024

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High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

Applied physics letters, 2019-12, Vol.115 (26)

2019

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Structural Effect on the Dielectric Constant of Hydrocarbon Liquids: A Molecular Dynamics Study Using the Drude Polarizable Force Field

Bulletin of the Chemical Society of Japan, 2023-11, Vol.96 (11), p.1258-1261

2023

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Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

Applied physics letters, 2021-04, Vol.118 (17)

2021

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NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy

Applied physics letters, 2020-07, Vol.117 (2)

2020

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Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

Journal of applied physics, 2023-12, Vol.134 (21)

2023

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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Applied physics letters, 2016-03, Vol.108 (13), p.133503

2016

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Ultrahigh-resolution imaging of biogenic phosphorus and molybdenum in palaeoproterozoic gunflint microfossils

Scientific reports, 2024-09, Vol.14 (1), p.21780-12, Article 21780

2024

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Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

Applied physics letters, 2022-03, Vol.120 (12)

2022

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Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

Applied physics letters, 2022-02, Vol.120 (9)

2022

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Evolutionary diversification of paleoproterozoic prokaryotes: New microfossil records in 1.88 Ga Gunflint Formation

Precambrian research, 2022-09, Vol.380, p.106798, Article 106798

2022

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Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga2O3 using bright-field x-ray topography based on anomalous transmission

Applied physics letters, 2022-07, Vol.121 (1)

2022

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Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

Journal of applied physics, 2023-10, Vol.134 (15)

2023

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High-dose-rate brachytherapy using inverse planning optimization with tandem and ovoid applicators for locally advanced cervical cancer: a simulation study

Radiological physics and technology, 2021-09, Vol.14 (3), p.262-270

2021

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Effect of conversion on epoxy resin properties: Combined molecular dynamics simulation and experimental study

Polymer (Guilford), 2022-07, Vol.254, p.125041, Article 125041

2022

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Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

Applied physics letters, 2021-06, Vol.118 (25)

2021

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Silica-Based Nonwoven Fiber Fabricated by Electrospinning to Promote Fibroblast Functions

Bulletin of the Chemical Society of Japan, 2020-04, Vol.93 (4), p.477-481

2020

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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Applied physics letters, 2022-11, Vol.121 (19)

2022

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Proton‐Switched Emission Behavior of Hexanuclear Molyb‐denum(II) Clusters Bearing Terminal Pyridine Carboxylate Ligands

European journal of inorganic chemistry, 2020-08, Vol.2020 (31), p.2983-2989

2020

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Prospects for β-Ga 2 O 3 : now and into the future

Applied physics express, 2024-09, Vol.17 (9), p.90101

Sasaki, Kohei

2024

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Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Applied physics letters, 2024-01, Vol.124 (5)

2024

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Investigation of dose-rate effects and cell-cycle distribution under protracted exposure to ionizing radiation for various dose-rates

Scientific reports, 2018-05, Vol.8 (1), p.8287-14, Article 8287

2018

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Prospects for β-Ga2O3: now and into the future

High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

Structural Effect on the Dielectric Constant of Hydrocarbon Liquids: A Molecular Dynamics Study Using the Drude Polarizable Force Field

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices

Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy

Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Ultrahigh-resolution imaging of biogenic phosphorus and molybdenum in palaeoproterozoic gunflint microfossils

Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

Evolutionary diversification of paleoproterozoic prokaryotes: New microfossil records in 1.88 Ga Gunflint Formation

Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga2O3 using bright-field x-ray topography based on anomalous transmission

Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect x-ray topography

High-dose-rate brachytherapy using inverse planning optimization with tandem and ovoid applicators for locally advanced cervical cancer: a simulation study

Effect of conversion on epoxy resin properties: Combined molecular dynamics simulation and experimental study

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

Silica-Based Nonwoven Fiber Fabricated by Electrospinning to Promote Fibroblast Functions

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Proton‐Switched Emission Behavior of Hexanuclear Molyb‐denum(II) Clusters Bearing Terminal Pyridine Carboxylate Ligands

Prospects for β-Ga 2 O 3 : now and into the future

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Investigation of dose-rate effects and cell-cycle distribution under protracted exposure to ionizing radiation for various dose-rates

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