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Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

Nature communications, 2016-09, Vol.7 (1), p.12611-12611, Article 12611

2016

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Multibit memory operation of metal-oxide bi-layer memristors

Scientific reports, 2017-12, Vol.7 (1), p.17532-7, Article 17532

2017

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Challenges hindering memristive neuromorphic hardware from going mainstream

Nature communications, 2018-12, Vol.9 (1), p.5267-4, Article 5267

2018

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Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Applied physics letters, 2021-03, Vol.118 (11)

2021

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Technology agnostic frequency characterization methodology for memristors

Scientific reports, 2021-10, Vol.11 (1), p.20599-20599, Article 20599

2021

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Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning

Frontiers in neuroscience, 2016-10, Vol.10, p.482-482

2016

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A memristor fingerprinting and characterisation methodology for hardware security

Scientific reports, 2023-06, Vol.13 (1), p.9392-9392, Article 9392

2023

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Author Correction: UV induced resistive switching in hybrid polymer metal oxide memristors

Scientific reports, 2021-03, Vol.11 (1), p.7348-7348, Article 7348

2021

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Selectively biased tri-terminal vertically-integrated memristor configuration

Scientific reports, 2022-06, Vol.12 (1), p.10467-10467, Article 10467

2022

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UV induced resistive switching in hybrid polymer metal oxide memristors

Scientific reports, 2020-12, Vol.10 (1), p.21130-21130, Article 21130

2020

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An FPGA-based system for generalised electron devices testing

Scientific reports, 2022-08, Vol.12 (1), p.13912-13912, Article 13912

2022

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Compliance-free, analog RRAM devices based on SnOx

Scientific reports, 2024-06, Vol.14 (1), p.14163-8, Article 14163

2024

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Enabling Technologies for Very Large-Scale Synaptic Electronics

2018

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An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies

Scientific reports, 2019-12, Vol.9 (1), p.19412-10, Article 19412

2019

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Monitoring PSA levels as chemical state-variables in metal-oxide memristors

Scientific reports, 2020-09, Vol.10 (1), p.15281-15281, Article 15281

2020

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Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance

Electronic materials letters, 2024-07, Vol.20 (4), p.363-371

2024

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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ Memristors—Part II: Physics-Based Model

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4885-4890

2021

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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ -Based Memristors—Part I: Behavioral Model

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4877-4884

2021

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Palimpsest memories stored in memristive synapses

Science advances, 2022-06, Vol.8 (25), p.eabn7920-eabn7920

2022

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Electron Transporting Perylene Diimide-Based Random Terpolymers with Variable Co-Monomer Feed Ratio: A Route to All-Polymer-Based Photodiodes

Macromolecules, 2022-01, Vol.55 (2), p.672-683

2022

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Compliance-free, analog RRAM devices based on SnO x

Scientific reports, 2024-06, Vol.14 (1), p.14163

2024

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Single-trial detection of auditory cues from the rat brain using memristors

Science advances, 2024-09, Vol.10 (36), p.eadp7613

2024

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ZrO X insertion layer enhanced switching and synaptic performances of TiO X -based memristive devices

IOP conference series. Materials Science and Engineering, 2021-02, Vol.1034 (1), p.12142

2021

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ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices

IOP conference series. Materials Science and Engineering, 2021-02, Vol.1034 (1)

2021

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Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory

IOP conference series. Materials Science and Engineering, 2021-02, Vol.1034 (1), p.12140

2021

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Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

Multibit memory operation of metal-oxide bi-layer memristors

Challenges hindering memristive neuromorphic hardware from going mainstream

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Technology agnostic frequency characterization methodology for memristors

Analog Memristive Synapse in Spiking Networks Implementing Unsupervised Learning

A memristor fingerprinting and characterisation methodology for hardware security

Author Correction: UV induced resistive switching in hybrid polymer metal oxide memristors

Selectively biased tri-terminal vertically-integrated memristor configuration

UV induced resistive switching in hybrid polymer metal oxide memristors

An FPGA-based system for generalised electron devices testing

Compliance-free, analog RRAM devices based on SnOx

Enabling Technologies for Very Large-Scale Synaptic Electronics

An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies

Monitoring PSA levels as chemical state-variables in metal-oxide memristors

Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$/$$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ Memristors—Part II: Physics-Based Model

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ -Based Memristors—Part I: Behavioral Model

Palimpsest memories stored in memristive synapses

Electron Transporting Perylene Diimide-Based Random Terpolymers with Variable Co-Monomer Feed Ratio: A Route to All-Polymer-Based Photodiodes

Compliance-free, analog RRAM devices based on SnO x

Single-trial detection of auditory cues from the rat brain using memristors

ZrO X insertion layer enhanced switching and synaptic performances of TiO X -based memristive devices

ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices

Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory

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