UB Paderborn / Katalog / Suche / in CDI

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Applied physics letters, 2012-01, Vol.100 (3), p.031908-031908-3

2012

Volltextzugriff (PDF)

Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Journal of physics. D, Applied physics, 2013-03, Vol.46 (9), p.095103-1-6

2013

Volltextzugriff (PDF)

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Applied surface science, 2014-07, Vol.306, p.89-93

2014

Volltextzugriff (PDF)

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Physica. B, Condensed matter, 2016-01, Vol.480, p.14-22

2016

Volltextzugriff (PDF)

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Journal of applied physics, 2013-11, Vol.114 (17)

2013

Volltextzugriff (PDF)

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Journal of applied physics, 2012-07, Vol.112 (2)

2012

Volltextzugriff (PDF)

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

Volltextzugriff (PDF)

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1343-1349

2017

Volltextzugriff (PDF)

Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Journal of physics. Conference series, 2016-11, Vol.769 (1), p.12075

2016

Volltextzugriff (PDF)

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Surface science, 2010-02, Vol.604 (3), p.318-321

2010

Volltextzugriff (PDF)

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Physica. E, Low-dimensional systems & nanostructures, 2013-02, Vol.48, p.61-65

2013

Volltextzugriff (PDF)

Diagnostic and characterization of the VCSEL diodes based on GaSb

Applied physics. B, Lasers and optics, 2010-04, Vol.99 (1-2), p.333-338

2010

Volltextzugriff (PDF)

Vapour pressure measurement of metal organic precursors used for MOVPE

The Journal of chemical thermodynamics, 2006-03, Vol.38 (3), p.312-322

2006

Volltextzugriff (PDF)

Electro- and photoluminescence of InAs/GaAs quantum dot structures

Journal of physics. Conference series, 2010-09, Vol.245 (1), p.012080

2010

Volltextzugriff (PDF)

Photovoltage spectroscopy of InAs/GaAs quantum dot structures

Journal of applied physics, 2002-06, Vol.91 (12), p.10103-10106

2002

Volltextzugriff (PDF)

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

Applied physics letters, 2006-03, Vol.88 (13)

2006

Volltextzugriff (PDF)

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.66-71

2010

Volltextzugriff (PDF)

Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

Physica. E, Low-dimensional systems & nanostructures, 2007-01, Vol.36 (1), p.106-113

2007

Volltextzugriff (PDF)

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Journal of applied physics, 2005-10, Vol.98 (8)

2005

Volltextzugriff (PDF)

Room-temperature diode laser photoacoustic spectroscopy near 2.3 μm

Applied physics. B, Lasers and optics, 2005-10, Vol.81 (6), p.857-861

2005

Volltextzugriff (PDF)

Influence of photon recycling on photovoltage spectra of GaSb diodes

Journal of applied physics, 2004-05, Vol.95 (9), p.5104-5110

2004

Volltextzugriff (PDF)

Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs

Journal of applied physics, 2001-09, Vol.90 (6), p.2813-2817

2001

Volltextzugriff (PDF)

The Metalorganic Vapour Phase Epitaxy Growth of A III B V Heterostructures Observed by Reflection Anisotropy Spectroscopy

Acta physica Polonica, A, 2016-01, Vol.129 (1a), p.A-75-A-78

2016

Volltextzugriff (PDF)

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

Volltextzugriff (PDF)

Deep levels in GaAs due to Si δ doping

Journal of applied physics, 2000-12, Vol.88 (11), p.6488-6494

2000

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Diagnostic and characterization of the VCSEL diodes based on GaSb

Vapour pressure measurement of metal organic precursors used for MOVPE

Electro- and photoluminescence of InAs/GaAs quantum dot structures

Photovoltage spectroscopy of InAs/GaAs quantum dot structures

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Room-temperature diode laser photoacoustic spectroscopy near 2.3 μm

Influence of photon recycling on photovoltage spectra of GaSb diodes

Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs

The Metalorganic Vapour Phase Epitaxy Growth of A III B V Heterostructures Observed by Reflection Anisotropy Spectroscopy

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

Deep levels in GaAs due to Si δ doping

Aktive Filter

Suchergebnisse filtern