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Influence of screening dynamics on excitons in Ga2O3 polymorphs

Applied physics letters, 2019-03, Vol.114 (12)

2019

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Infrared absorbance of silicene and germanene

Applied physics letters, 2012-06, Vol.100 (26)

2012

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Direct-bandgap emission from hexagonal Ge and SiGe alloys

Nature (London), 2020-04, Vol.580 (7802), p.205-209

2020

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Optical absorption in degenerately doped semiconductors: Mott transition or Mahan excitons?

Physical review letters, 2011-11, Vol.107 (23), p.236405-236405, Article 236405

2011

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Valence-band splittings in cubic and hexagonal AlN, GaN, and InN

Applied physics letters, 2010-12, Vol.97 (23), p.232101-232101-3

2010

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Properties of the In2O3-Si interface: An ab initio study of a model geometry

AIP Conference Proceedings, 2014, Vol.1598 (1), p.30

2014

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Tunable electronic properties of two-dimensional nitrides for light harvesting heterostructures

Applied physics letters, 2017-01, Vol.110 (1)

2017

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Direct experimental determination of the spontaneous polarization of GaN

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (8), Article 081302

2012

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Heterocrystalline structures: New types of superlattices?

Physical review letters, 1995-09, Vol.75 (11), p.2180-2183

1995

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First-principles optical spectra for F centers in MgO

Physical review letters, 2012-03, Vol.108 (12), p.126404-126404, Article 126404

2012

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Side-dependent electron escape from graphene- and graphane-like SiC layers

Applied physics letters, 2012-01, Vol.100 (4), p.043110-043110-4

2012

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Properties of the In{sub 2}O{sub 3}-Si interface: An ab initio study of a model geometry

AIP conference proceedings, 2014-05, Vol.1598 (1)

2014

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Ab initio description and visualization of charge transport in durene crystals

Applied physics letters, 2008-12, Vol.93 (22)

2008

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In4 d and Ga3 d levels in In x X 1− x N (X = Ga, Al) alloys

Applied physics letters, 2013-04, Vol.102 (17), p.172105

2013

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Ab initio description and visualization of charge transportin durene crystals

Applied physics letters, 2008-12, Vol.93 (22), p.222105-222105-3

2008

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Strain Modification of GaN in AlGaN/GaN Epitaxial Films

Japanese Journal of Applied Physics, 1999-05, Vol.38 (5A), p.L498

1999

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Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces

Physical review. B, Condensed matter, 1997-09, Vol.56 (12), p.7404-7415

1997

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Energetics and approximate quasiparticle electronic structure of low-index surfaces of SnO 2

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (7), Article 075320

2012

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Beyond the G W approximation: Combining correlation channels

Physical review. B, Condensed matter and materials physics, 2012-04, Vol.85 (15), Article 155131

2012

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Ab initio calculation of optical properties with excitonic effects in wurtzite In sub(x)Ga sub(1-x)N and In sub(x)Al sub(1-x)N alloys

Physical review. B, Condensed matter and materials physics, 2013-05, Vol.87 (19)

2013

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Ab initio calculation of optical properties with excitonic effects in wurtzite In x Ga 1 − x N and In x Al 1 − x N alloys

Physical review. B, Condensed matter and materials physics, 2013-05, Vol.87 (19), Article 195211

2013

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Energetics and approximate quasiparticle electronic structure of low-index surfaces of SnO2

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (7)

2012

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Energetics and approximate quasiparticle electronic structure of low-index surfaces of SnO sub(2)

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (7)

2012

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Comment on “Raman Modes of 6 H Polytype of Silicon Carbide to Ultrahigh Pressures”

Physical review letters, 1996-08, Vol.77 (8), p.1660-1660

1996

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Initial stages of III-nitride growth

Applied physics letters, 1999-06, Vol.74 (25), p.3851-3853

1999

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Influence of screening dynamics on excitons in Ga2O3 polymorphs

Infrared absorbance of silicene and germanene

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Optical absorption in degenerately doped semiconductors: Mott transition or Mahan excitons?

Valence-band splittings in cubic and hexagonal AlN, GaN, and InN

Properties of the In2O3-Si interface: An ab initio study of a model geometry

Tunable electronic properties of two-dimensional nitrides for light harvesting heterostructures

Direct experimental determination of the spontaneous polarization of GaN

Heterocrystalline structures: New types of superlattices?

First-principles optical spectra for F centers in MgO

Side-dependent electron escape from graphene- and graphane-like SiC layers

Properties of the In{sub 2}O{sub 3}-Si interface: An ab initio study of a model geometry

Ab initio description and visualization of charge transport in durene crystals

In4 d and Ga3 d levels in In x X 1− x N (X = Ga, Al) alloys

Ab initio description and visualization of charge transportin durene crystals

Strain Modification of GaN in AlGaN/GaN Epitaxial Films

Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces

Energetics and approximate quasiparticle electronic structure of low-index surfaces of SnO 2

Beyond the G W approximation: Combining correlation channels

Ab initio calculation of optical properties with excitonic effects in wurtzite In sub(x)Ga sub(1-x)N and In sub(x)Al sub(1-x)N alloys

Ab initio calculation of optical properties with excitonic effects in wurtzite In x Ga 1 − x N and In x Al 1 − x N alloys

Energetics and approximate quasiparticle electronic structure of low-index surfaces of SnO2

Energetics and approximate quasiparticle electronic structure of low-index surfaces of SnO sub(2)

Comment on “Raman Modes of 6 H Polytype of Silicon Carbide to Ultrahigh Pressures”

Initial stages of III-nitride growth

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