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Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High-[Formula Omitted] Gate Dielectrics

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.1027-1034

2008

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Correction to: Superior biomechanical properties and tying time with the modified Prusik knot and Wittstein suture loop to the Krackow stitch

Archives of orthopaedic and trauma surgery, 2018-02, Vol.138 (2), p.245-245

2018

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Three-dimensional molecular phase separation and flow patterns with novel multilevel fluidics

Molecular & cellular biomechanics, 2006-06, Vol.3 (2), p.69

2006

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High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric

IEEE electron device letters, 2006-05, Vol.27 (5), p.360-363

2006

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Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement: Gallium nitride electronics

Semiconductor science and technology, 2013, Vol.28 (7)

2013

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Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta209/HfO2/Si structure

Journal of materials research, 2008-07, Vol.23 (7), p.2023-2032

2008

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Effects of HfO 2 buffer layer thickness on the properties of Pt/SrBi 2 Ta 2 O 9 /HfO 2 /Si structure

Journal of materials research, 2008-07, Vol.23 (7), p.2023-2032

2008

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A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2007, p.1-2

2007

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High-performance poly-silicon TFTs using HfO sub(2) gate dielectric

IEEE electron device letters, 2006-01, Vol.27 (5)

2006

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High-pPerformance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric

IEEE electron device letters, 2007, Vol.28 (10), p.902-904

2007

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Thermal Imaging of Single Living Cells Using Semiconductor Quantum Dots

Yang, Jui-Ming

2009

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Study of the Erase Mechanism of MANOS ( Metal/Al sub(2)O sub(3)/SiN/SiO sub(2)/Si) Device

IEEE electron device letters, 2007-01, Vol.28 (7)

2007

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HfO(2) MIS capacitor with copper gate electrode

IEEE electron device letters, 2004-12, Vol.25 (12), p.784-786

2004

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HfO/sub 2/ MIS capacitor with copper gate electrode

IEEE electron device letters, 2004-12, Vol.25 (12), p.784-786

2004

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HfO sub(2) MIS capacitor with copper gate electrode

IEEE electron device letters, 2004-01, Vol.25 (12)

2004

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High-performance Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//HfO/sub 2//Si structure for nondestructive readout memory

IEEE electron device letters, 2003-09, Vol.24 (9), p.553-555

2003

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High-performance Pt/SrBi(2)Ta(2)O(9)/HfO(2)/Si structure for nondestructive readout memory

IEEE electron device letters, 2003-09, Vol.24 (9), p.553-555

2003

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Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.7869

2005

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High-performance Pt/SrBi sub(2)Ta sub(2)O sub(9) /HfO sub(2)/Si structure for nondestructive readout memory

IEEE electron device letters, 2003-01, Vol.24 (9)

2003

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Electrical Characteristics of Thin HfO 2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1R), p.87

2005

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Electrical properties of metal–ferroelectric–insulator–semiconductor using sol–gel derived SrBi 2Ta 2O 9 film and ultra-thin Si 3N 4 buffer layer

Thin solid films, 2002, Vol.420, p.377-381

2002

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Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi 2 Ta 2 O 9 thin films with seeding layers

MRS proceedings, 2002, Vol.718, Article D10.11

2002

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The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO 3 Thin Films Deposited by Liquid Source Misted Chemical Deposition

Japanese Journal of Applied Physics, 2001-12, Vol.40 (12A), p.L1333

2001

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Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer

Thin solid films, 2002, Vol.420-21, p.377-381

2002

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Public attitudes towards government’s role in unemployment provision in three East Asian countries

Journal of Asian public policy, 2024-04, p.1-17

2024

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Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High-[Formula Omitted] Gate Dielectrics

Correction to: Superior biomechanical properties and tying time with the modified Prusik knot and Wittstein suture loop to the Krackow stitch

Three-dimensional molecular phase separation and flow patterns with novel multilevel fluidics

High-performance poly-silicon TFTs using HfO/sub 2/ gate dielectric

Contact engineering of GaN-on-silicon power devices for breakdown voltage enhancement: Gallium nitride electronics

Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta209/HfO2/Si structure

Effects of HfO 2 buffer layer thickness on the properties of Pt/SrBi 2 Ta 2 O 9 /HfO 2 /Si structure

A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices

High-performance poly-silicon TFTs using HfO sub(2) gate dielectric

High-pPerformance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric

Thermal Imaging of Single Living Cells Using Semiconductor Quantum Dots

Study of the Erase Mechanism of MANOS ( Metal/Al sub(2)O sub(3)/SiN/SiO sub(2)/Si) Device

HfO(2) MIS capacitor with copper gate electrode

HfO/sub 2/ MIS capacitor with copper gate electrode

HfO sub(2) MIS capacitor with copper gate electrode

High-performance Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//HfO/sub 2//Si structure for nondestructive readout memory

High-performance Pt/SrBi(2)Ta(2)O(9)/HfO(2)/Si structure for nondestructive readout memory

Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment

High-performance Pt/SrBi sub(2)Ta sub(2)O sub(9) /HfO sub(2)/Si structure for nondestructive readout memory

Electrical Characteristics of Thin HfO 2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments

Electrical properties of metal–ferroelectric–insulator–semiconductor using sol–gel derived SrBi 2Ta 2O 9 film and ultra-thin Si 3N 4 buffer layer

Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi 2 Ta 2 O 9 thin films with seeding layers

The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO 3 Thin Films Deposited by Liquid Source Misted Chemical Deposition

Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer

Public attitudes towards government’s role in unemployment provision in three East Asian countries

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