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Improvement of luminescence properties of n-GaN using TEGa precursor

Journal of crystal growth, 2020-02, Vol.531, p.125383, Article 125383

2020

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InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Journal of crystal growth, 2017-04, Vol.464, p.206-210

2017

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Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Applied physics letters, 2012-01, Vol.100 (3), p.031908-031908-3

2012

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Applied surface science, 2014-07, Vol.306, p.89-93

2014

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Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Journal of crystal growth, 2014-06, Vol.396, p.54-60

2014

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Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of crystal growth, 2010-04, Vol.312 (8), p.1205-1209

2010

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Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Journal of physics. Conference series, 2016-11, Vol.769 (1), p.12075

2016

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Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Surface science, 2010-02, Vol.604 (3), p.318-321

2010

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Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

Journal of crystal growth, 2011-01, Vol.315 (1), p.110-113

2011

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Diagnostic and characterization of the VCSEL diodes based on GaSb

Applied physics. B, Lasers and optics, 2010-04, Vol.99 (1-2), p.333-338

2010

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Vapor pressure of germanium precursors

Journal of crystal growth, 2008-11, Vol.310 (23), p.4720-4723

2008

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Vapour pressure measurement of metal organic precursors used for MOVPE

The Journal of chemical thermodynamics, 2006-03, Vol.38 (3), p.312-322

2006

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Photovoltage spectroscopy of InAs/GaAs quantum dot structures

Journal of applied physics, 2002-06, Vol.91 (12), p.10103-10106

2002

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Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy

Applied surface science, 2006-10, Vol.253 (1), p.85-89

2006

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GaSb based lasers operating near 2.3 μm for high resolution absorption spectroscopy

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy, 2005-10, Vol.61 (13), p.3066-3069

2005

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Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

Applied physics letters, 2006-03, Vol.88 (13)

2006

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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Semiconductors (Woodbury, N.Y.), 2010-01, Vol.44 (1), p.66-71

2010

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Vapor pressure of metal organic precursors

Journal of crystal growth, 2003-02, Vol.248, p.99-107

2003

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Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Journal of applied physics, 2005-10, Vol.98 (8)

2005

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Measurement of vapour pressure of In-based metalorganics for MOVPE

Journal of crystal growth, 2004-12, Vol.272 (1), p.42-46

2004

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Room-temperature diode laser photoacoustic spectroscopy near 2.3 μm

Applied physics. B, Lasers and optics, 2005-10, Vol.81 (6), p.857-861

2005

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Influence of photon recycling on photovoltage spectra of GaSb diodes

Journal of applied physics, 2004-05, Vol.95 (9), p.5104-5110

2004

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InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy

Journal of crystal growth, 2003-02, Vol.248, p.328-332

2003

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Improvement of luminescence properties of n-GaN using TEGa precursor

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

Diagnostic and characterization of the VCSEL diodes based on GaSb

Vapor pressure of germanium precursors

Vapour pressure measurement of metal organic precursors used for MOVPE

Photovoltage spectroscopy of InAs/GaAs quantum dot structures

Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy

GaSb based lasers operating near 2.3 μm for high resolution absorption spectroscopy

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Vapor pressure of metal organic precursors

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Measurement of vapour pressure of In-based metalorganics for MOVPE

Room-temperature diode laser photoacoustic spectroscopy near 2.3 μm

Influence of photon recycling on photovoltage spectra of GaSb diodes

InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy

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