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Developments in Mask-Free Singularly Addressable Nano-LED Lithography

Nanomanufacturing, 2024-04, Vol.4 (2), p.99-110

2024

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Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

Crystals (Basel), 2023-08, Vol.13 (8), p.1267

2023

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Transient THz Emission and Effective Mass Determination in Highly Resistive GaAs Crystals Excited by Femtosecond Optical Pulses

Crystals (Basel), 2022-11, Vol.12 (11), p.1635

2022

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Magnetic properties of Gd-doped GaN

Physica Status Solidi. B: Basic Solid State Physics, 2014-09, Vol.251 (9), p.1673-1684

2014

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Fully photon operated transmistor / all-optical switch based on a layered Ge1Sb2Te4 phase change medium

FlatChem, 2020-09, Vol.23, p.100186, Article 100186

2020

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The Covalent Functionalization of Layered Black Phosphorus by Nucleophilic Reagents

Angewandte Chemie International Edition, 2017-08, Vol.56 (33), p.9891-9896

International ed. in English, 2017

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Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials

Journal of magnetism and magnetic materials, 2024-03, Vol.593, p.171641, Article 171641

2024

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Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials

Journal of magnetism and magnetic materials, 2023-12, Vol.593

2023

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Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system

Progress in crystal growth and characterization of materials, 2015-06, Vol.61 (2-4), p.27-45

2015

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Laser-triggered terahertz radiation from interlayer exchange-coupled spintronic emitters

AIP Conference Proceedings, 2024, Vol.3054 (1)

2024

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Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations

FlatChem, 2022-11, Vol.36, p.100447, Article 100447

2022

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Professor J. Brian Mullin retires as Editor-in-Chief from the journal Progress in Crystal Growth and Characterization of Materials

Progress in crystal growth and characterization of materials, 2019-08, Vol.65 (3), p.100453, Article 100453

2019

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Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

Semiconductor physics, quantum electronics, and optoelectronics, 2021-11, Vol.24 (4), p.407-412

2021

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Nano-LED induced chemical reactions for structuring processes

Nanoscale advances, 2020-11, Vol.2 (11), p.5421-5427

2020

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Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting

ACS applied materials & interfaces, 2016-08, Vol.8 (34), p.22484-22492

2016

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Generation of terahertz transients from Co 2 Fe 0.4 Mn 0.6 Si -Heusler-alloy/normal-metal nanobilayers excited by femtosecond optical pulses

Physical review research, 2021-10, Vol.3 (4), Article 043025

2021

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Monitoring structural influences on quantum transport in InAs nanowires

Applied physics letters, 2012-08, Vol.101 (6), p.62104

2012

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The Covalent Functionalization of Layered Black Phosphorus by Nucleophilic Reagents

Angewandte Chemie, 2017-08, Vol.129 (33), p.10023-10028

2017

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(Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices

ECS transactions, 2016, Vol.72 (2), p.307-317

2016

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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO 2 layer as gate dielectric

Applied physics letters, 2009-01, Vol.94 (4), p.042114-042114-3

2009

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In x Ga 1− x As/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics

Journal of crystal growth, 2008, Vol.310 (23), p.4821-4825

2008

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Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075001

2010

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Strain-enhanced electron mobility anisotropy in In x Ga 1− x As/InP two-dimensional electron gases

Physica. E, Low-dimensional systems & nanostructures, 2010, Vol.42 (4), p.1130-1133

2010

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The growth mechanism of GaN with different H2/N2 carrier gas ratios

Journal of crystal growth, 2007-09, Vol.307 (1), p.6-13

2007

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Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches

MRS proceedings, 2012, Vol.1408 (1), p.29-34, Article mrsf11-1408-bb20-14

2012

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Developments in Mask-Free Singularly Addressable Nano-LED Lithography

Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy

Transient THz Emission and Effective Mass Determination in Highly Resistive GaAs Crystals Excited by Femtosecond Optical Pulses

Magnetic properties of Gd-doped GaN

Fully photon operated transmistor / all-optical switch based on a layered Ge1Sb2Te4 phase change medium

The Covalent Functionalization of Layered Black Phosphorus by Nucleophilic Reagents

Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials

Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials

Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system

Laser-triggered terahertz radiation from interlayer exchange-coupled spintronic emitters

Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations

Professor J. Brian Mullin retires as Editor-in-Chief from the journal Progress in Crystal Growth and Characterization of Materials

Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

Nano-LED induced chemical reactions for structuring processes

Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting

Generation of terahertz transients from Co 2 Fe 0.4 Mn 0.6 Si -Heusler-alloy/normal-metal nanobilayers excited by femtosecond optical pulses

Monitoring structural influences on quantum transport in InAs nanowires

The Covalent Functionalization of Layered Black Phosphorus by Nucleophilic Reagents

(Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices

Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO 2 layer as gate dielectric

In x Ga 1− x As/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics

Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates

Strain-enhanced electron mobility anisotropy in In x Ga 1− x As/InP two-dimensional electron gases

The growth mechanism of GaN with different H2/N2 carrier gas ratios

Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches

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