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Growth of bulk GaN crystals

Journal of applied physics, 2020-08, Vol.128 (5)

2020

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Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Semiconductor science and technology, 2016-09, Vol.31 (9), p.93002

2016

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Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Journal of crystal growth, 2018-10, Vol.499, p.1-7

2018

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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.80-85

2016

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Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1030

2019

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Crystal growth of HVPE-GaN doped with germanium

Journal of crystal growth, 2017-12, Vol.480, p.102-107

2017

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Homoepitaxial growth of HVPE-GaN doped with Si

Journal of crystal growth, 2016-12, Vol.456, p.91-96

2016

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Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Journal of crystal growth, 2016-12, Vol.456, p.86-90

2016

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Electrical characterization of HVPE GaN containing different concentrations of carbon dopants

Semiconductor science and technology, 2018-12, Vol.33 (12), p.125024

2018

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Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

Applied physics letters, 2008-06, Vol.92 (23), p.231909-231909-3

2008

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Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Journal of crystal growth, 2017-10, Vol.475, p.121-126

2017

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Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Applied physics letters, 2005-01, Vol.86 (3), p.031915-031915-3

2005

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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Journal of crystal growth, 2016-12, Vol.456, p.73-79

2016

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Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

Journal of crystal growth, 2014-10, Vol.403, p.77-82

2014

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Revealing extended defects in HVPE-grown GaN

Journal of crystal growth, 2010-09, Vol.312 (18), p.2611-2615

2010

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Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2014-09, Vol.401, p.355-358

2014

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(Invited) Growth and Characterization of Bulk HVPE-GaN – Pathway to Highly Conductive and Semi-Insulating GaN Substrates

ECS transactions, 2017-01, Vol.80 (10), p.991-1003

2017

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Electron spin resonance and Rashba field in GaN-based materials

Physica. B, Condensed matter, 2011-07, Vol.406 (13), p.2548-2554

2011

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High nitrogen pressure solution growth of GaN in multi feed-seed configuration

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.453-456

2012

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The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Journal of crystal growth, 2007-09, Vol.307 (2), p.298-301

2007

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Free and bound excitons in GaN ∕ AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar ( 11 2 ¯ 0 ) direction

Applied physics letters, 2005-04, Vol.86 (16), p.162112-162112-3

2005

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The influence of lattice parameter variation on microstructure of GaN single crystals

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.261-264

2005

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The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

Applied physics letters, 1999-10, Vol.75 (16), p.2441-2443

1999

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Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations

Applied physics letters, 2006-10, Vol.89 (17), p.172119-172119-3

2006

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Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

Journal of crystal growth, 2003-08, Vol.255 (3), p.241-249

2003

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Growth of bulk GaN crystals

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Crystal growth of HVPE-GaN doped with germanium

Homoepitaxial growth of HVPE-GaN doped with Si

Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Electrical characterization of HVPE GaN containing different concentrations of carbon dopants

Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

Revealing extended defects in HVPE-grown GaN

Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy

(Invited) Growth and Characterization of Bulk HVPE-GaN – Pathway to Highly Conductive and Semi-Insulating GaN Substrates

Electron spin resonance and Rashba field in GaN-based materials

High nitrogen pressure solution growth of GaN in multi feed-seed configuration

The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Free and bound excitons in GaN ∕ AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar ( 11 2 ¯ 0 ) direction

The influence of lattice parameter variation on microstructure of GaN single crystals

The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals

Carrier recombination and diffusion in GaN revealed by transient luminescence under one-photon and two-photon excitations

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

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