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Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

Journal of crystal growth, 1997-05, Vol.175-176, p.1016-1021

1997

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Nature of native oxide on GaN surface and its reaction with Al

Applied physics letters, 1996-11, Vol.69 (21), p.3212-3214

1996

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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Solid state communications, 2007, Vol.142 (4), p.206-211

2007

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Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Applied physics letters, 2005-10, Vol.87 (16), p.161901-161901-3

2005

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Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-12, Vol.145 (1-3), p.48-56

2007

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Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Microelectronics, 2009-02, Vol.40 (2), p.360-362

2009

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Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001, Vol.308, p.93-97

2001

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Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Journal of applied physics, 2005-07, Vol.98 (1), p.016109-016109-3

2005

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Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007, Vol.145 (1), p.48-56

2007

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Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Physica status solidi, 2007, Vol.244 (8), p.2892

2007

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Importance of ITO surface conditions for the interaction with thin CuPc layers

Organic electronics, 2005-08, Vol.6 (4), p.175-181

2005

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Cracks in GaN/AlN multiple quantum well structures grown by MBE

17th Int. Vacuum Congress and 13th Int. Conf. on Surface Science, Stockholm, Sweden, 2008-03, Vol.100 (4), p.042026

2008

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Diffusion of nitrogen in gallium arsenide

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.367-370

2003

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Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001-12, Vol.308-310, p.93-97

2001

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Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy

Solid-state electronics, 2003-03, Vol.47 (3), p.539-542

2003

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Characterisation of surface morphological defects in MBE-grown GaN 0.1As 0.9 layers on GaAs

Applied surface science, 2000, Vol.166 (1), p.259-262

2000

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Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Superlattices and microstructures, 2012-07, Vol.52 (1), p.70-77

2012

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Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateral inhomogeneities

Journal of crystal growth, 2001-07, Vol.227, p.381-385

2001

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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Physical review. B, Condensed matter, 1995-09, Vol.52 (12), p.R8643-R8645

1995

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Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.685-688

1999

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Study of Alq 3 thermal evaporation rate effects on the OLED

Materials science & engineering. B, Solid-state materials for advanced technology, 2004, Vol.112 (1), p.14-18

2004

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Molecular-beam-epitaxial growth of Ga 1− xIn xSb on GaAs substrates

Journal of crystal growth, 1997, Vol.175, p.883-887

1997

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Studies of GaN layers grown on sapphire using an RF-source

Journal of crystal growth, 1997-05, Vol.175-176, p.117-121

1997

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Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

Materials science forum, 1998-02, Vol.264-268, p.1185-1188

1998

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DC and RF performance of 0.15 µm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate

Electronics letters, 1995-07, Vol.31 (15), p.1292-1294

1995

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Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

Nature of native oxide on GaN surface and its reaction with Al

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Importance of ITO surface conditions for the interaction with thin CuPc layers

Cracks in GaN/AlN multiple quantum well structures grown by MBE

Diffusion of nitrogen in gallium arsenide

Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy

Characterisation of surface morphological defects in MBE-grown GaN 0.1As 0.9 layers on GaAs

Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateral inhomogeneities

Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Study of Alq 3 thermal evaporation rate effects on the OLED

Molecular-beam-epitaxial growth of Ga 1− xIn xSb on GaAs substrates

Studies of GaN layers grown on sapphire using an RF-source

Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

DC and RF performance of 0.15 µm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate

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