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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Micro & nano letters, 2020-01, Vol.15 (1), p.41-46

2020

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

IEEE electron device letters, 2020-10, Vol.41 (10), p.1488-1491

2020

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias

IEEE electron device letters, , Vol.40 (9), p.1389-1392

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IEEE_Xplore

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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IEEE_Xplore

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

2015 73rd Annual Device Research Conference (DRC), 2015, p.31-32

2015

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IEEE_Xplore

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Nature (London), 2018-03, Vol.555 (7695), p.183-189

2018

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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied physics letters, 2024-05, Vol.124 (20)

2024

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Applied physics letters, 2024-04, Vol.124 (17)

2024

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Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Applied physics letters, 2023-02, Vol.122 (9)

2023

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High-frequency conductivity and temperature dependence of electron effective mass in AlGaN/GaN heterostructures

Applied physics letters, 2022-06, Vol.120 (25)

2022

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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Journal of applied physics, 2024-05, Vol.135 (19)

2024

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Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Applied physics letters, 2022-05, Vol.120 (21)

2022

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Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Applied physics letters, 2018-08, Vol.113 (7)

2018

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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

GaN-based power devices: Physics, reliability, and perspectives

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

GaN/NbN epitaxial semiconductor/superconductor heterostructures

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Ohmic contacts to Gallium Nitride materials

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

High-frequency conductivity and temperature dependence of electron effective mass in AlGaN/GaN heterostructures

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

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