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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Applied physics letters, 2023-02, Vol.122 (9)

2023

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Applied physics letters, 2018-08, Vol.113 (7)

2018

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Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Applied physics letters, 2022-05, Vol.120 (21)

2022

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Thermal stability study of gallium nitride based magnetic field sensor

Journal of applied physics, 2023-10, Vol.134 (14)

2023

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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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Terahertz time-domain spectroscopy of two-dimensional plasmons in AlGaN/GaN heterostructures

Applied physics letters, 2020-08, Vol.117 (5)

2020

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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Applied physics letters, 2012-08, Vol.101 (8), p.82110

2012

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Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Applied physics letters, 2018-12, Vol.113 (24)

2018

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Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Applied physics letters, 2023-12, Vol.123 (26)

2023

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Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector

Applied physics letters, 2021-07, Vol.119 (1)

2021

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Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

GaN-based power devices: Physics, reliability, and perspectives

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Ohmic contacts to Gallium Nitride materials

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

A GaN–SiC hybrid material for high-frequency and power electronics

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Thermal stability study of gallium nitride based magnetic field sensor

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Terahertz time-domain spectroscopy of two-dimensional plasmons in AlGaN/GaN heterostructures

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

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