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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Materials, 2024-07, Vol.17 (13), p.3343

2024

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Materials, 2022-12, Vol.15 (24), p.8945

2022

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Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines (Basel), 2019-07, Vol.10 (8), p.492

2019

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High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Nanoscale research letters, 2020-05, Vol.15 (1), p.114-114, Article 114

2020

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Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Micromachines (Basel), 2023-01, Vol.14 (2), p.291

2023

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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Materials, 2022-01, Vol.15 (3), p.703

2022

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Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM

AIP advances, 2023-01, Vol.13 (1), p.015214-015214-5

2023

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Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

Materials, 2019-12, Vol.12 (24), p.4050

2019

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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines (Basel), 2019-10, Vol.10 (10), p.690

2019

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Fabrication and characterization of an AlGaN light emitting diode with Al-doped ZnO as a current spreading tunnel junction layer

AIP advances, 2023-09, Vol.13 (9), p.095324-095324-5

2023

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The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111)

Micromachines (Basel), 2024-04, Vol.15 (4), p.536

2024

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Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP advances, 2020-12, Vol.10 (12), p.125017-125017-7

2020

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP advances, 2020-07, Vol.10 (7), p.075212-075212-7

2020

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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP advances, 2019-12, Vol.9 (12), p.125231-125231-5

2019

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Cathodoluminescence of a 2 inch ultraviolet-light-source tube based on the integration of AlGaN materials and carbon nanotube field emitters

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (37), p.1154-11548

2019

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All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle

AIP advances, 2022-09, Vol.12 (9), p.095013-095013-6

2022

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A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

AIP advances, 2022-02, Vol.12 (2), p.025012-025012-5

2022

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Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

AIP advances, 2021-04, Vol.11 (4), p.045314-045314-6

2021

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Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

AIP advances, 2022-03, Vol.12 (3), p.035023-035023-6

2022

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Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor

Micromachines (Basel), 2023-06, Vol.14 (6), p.1186

2023

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Effects of Recess Depth Under the Gate Area on the V th -Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures

Journal of nanoscience and nanotechnology, 2020-07, Vol.20 (7), p.4170-4175

2020

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Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond

Journal of nanoscience and nanotechnology, 2019-10, Vol.19 (10), p.6119-6122

2019

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Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

AIP advances, 2020-06, Vol.10 (6), p.065111-065111-5

2020

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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM

Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Fabrication and characterization of an AlGaN light emitting diode with Al-doped ZnO as a current spreading tunnel junction layer

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111)

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

Cathodoluminescence of a 2 inch ultraviolet-light-source tube based on the integration of AlGaN materials and carbon nanotube field emitters

All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle

A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor

Effects of Recess Depth Under the Gate Area on the V th -Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures

Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

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