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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Topological effects of phonons in GaN and AlGaN: A potential perspective for tuning phonon transport

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2024-06, Vol.124 (24)

2024

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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied physics letters, 2024-05, Vol.124 (20)

2024

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Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Applied physics letters, 2018-08, Vol.113 (7)

2018

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Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Applied physics letters, 2018-12, Vol.113 (24)

2018

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Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Applied physics letters, 2023-12, Vol.123 (26)

2023

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Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Journal of applied physics, 2019-11, Vol.126 (18)

2019

Volltextzugriff (PDF)

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Applied physics letters, 2024-04, Vol.124 (17)

2024

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High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Applied physics letters, 2023-10, Vol.123 (15)

2023

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Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons

Applied physics letters, 2020-10, Vol.117 (16)

2020

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

A GaN–SiC hybrid material for high-frequency and power electronics

Ohmic contacts to Gallium Nitride materials

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Topological effects of phonons in GaN and AlGaN: A potential perspective for tuning phonon transport

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

An AlN/Al0.85Ga0.15N high electron mobility transistor

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons

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