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A 0.1-pJ/b/dB 28-Gb/s Maximum-Eye Tracking, Weight-Adjusting MM CDR and Adaptive DFE with Single Shared Error Sampler

2020 IEEE Symposium on VLSI Circuits, 2020, p.1-2

2020

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A 0.25-[micro]m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472

2002

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A 0.25 mu m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.124-125+430-431

2002

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A 0.25-[mu]m CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1318-1327

2007

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A 0.25-μm CMOS 1.9-GHz PHS RF transceiver with a 150-kHz low-IF architecture

IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1318-1327

2007

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A 0.25-mum 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25- \mum CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1318-1327

2007

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A 0.25-/spl mu/m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25 /spl mu/m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.1, p.162-457 vol.1

2002

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A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002, Vol.2, p.124-431

2002

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A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.7 μm-Pitch 108 Mpixel Nonacell-Based CMOS Image Sensor with Decision-Feedback Technique

2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022, p.283-287

2022

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0643 The Associated Factors Of Optimal Treatment Responses In Rapid Eye Movement Sleep Behavior Disorder

Sleep (New York, N.Y.), 2019-04, Vol.42 (Supplement_1), p.A257-A257

2019

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A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.1-3

2023

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1,[Formula: see text]2,[Formula: see text]3,[Formula: see text]4,[Formula: see text]6-Penta-O-Galloyl-β-D-Glucose from Galla rhois Ameliorates Renal Tubular Injury and Microvascular Inflammation in Acute Kidney Injury Rats

The American journal of Chinese medicine (1979), 2018, Vol.46 (4), p.785

2018

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1,2,3,4,6‐penta–O‐galloyl–β–D–glucose ameliorates renal injury in ischemia‐reperfusion induced acute renal failure rats

The FASEB journal, 2016-04, Vol.30 (S1)

2016

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1,25‐Dihydroxyvitamin D 3 enhances NK susceptibility of human melanoma cells via Hsp60‐mediated FAS expression

European journal of immunology, 2011-10, Vol.41 (10), p.2937-2946

2011

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1,25-Dihydroxyvitamin D sub(3) enhances NK susceptibility of human melanoma cells via Hsp60-mediated FAS expression

European journal of immunology, 2011-10, Vol.41 (10), p.2937-2946

2011

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1,25‐Dihydroxyvitamin D3 enhances NK susceptibility of human melanoma cells via Hsp60‐mediated FAS expression

European journal of immunology, 2011-10, Vol.41 (10), p.2937-2946

2011

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1,3-비스페닐치오 프로판을 배위자로 한 백금(Ⅱ) 착체의 선택적 세포독성

Yaghag-hoi-ji, 1999-06, Vol.43 (3), p.369-377

1999

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1-Palmitoyl-2-Linoleoyl-3-Acetyl-rac-Glycerol (PLAG) Rapidly Resolves LPS-Induced Acute Lung Injury Through the Effective Control of Neutrophil Recruitment

Frontiers in immunology, 2019-09, Vol.10, p.2177-2177

2019

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The 100 most-cited and 100 most-mentioned COVID-19-related radiological articles: a comparative bibliometric analysis

European radiology, 2024-02, Vol.34 (2), p.1167-1175

2024

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1168. Cost-effectiveness of high-dose quadrivalent influenza vaccine versus standard-dose quadrivalent influenza vaccine for older people in a country with high influenza vaccination rate

Open forum infectious diseases, 2023-11, Vol.10 (Supplement_2)

2023

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13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.218-220

2020

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13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.216-218

2019

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1 – 25 von 8.619

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A 0.1-pJ/b/dB 28-Gb/s Maximum-Eye Tracking, Weight-Adjusting MM CDR and Adaptive DFE with Single Shared Error Sampler

A 0.25-[micro]m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.25 mu m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

A 0.25-[mu]m CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

A 0.25-μm CMOS 1.9-GHz PHS RF transceiver with a 150-kHz low-IF architecture

A 0.25-mum 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.25- \mum CMOS 1.9-GHz PHS RF Transceiver With a 150-kHz Low-IF Architecture

A 0.25-/spl mu/m 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.25 /spl mu/m 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

A 0.25/spl mu/m 3.0V 1T1C 32Mb nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) scheme

A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.7 μm-Pitch 108 Mpixel Nonacell-Based CMOS Image Sensor with Decision-Feedback Technique

0643 The Associated Factors Of Optimal Treatment Responses In Rapid Eye Movement Sleep Behavior Disorder

A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

1,[Formula: see text]2,[Formula: see text]3,[Formula: see text]4,[Formula: see text]6-Penta-O-Galloyl-β-D-Glucose from Galla rhois Ameliorates Renal Tubular Injury and Microvascular Inflammation in Acute Kidney Injury Rats

1,2,3,4,6‐penta–O‐galloyl–β–D–glucose ameliorates renal injury in ischemia‐reperfusion induced acute renal failure rats

1,25‐Dihydroxyvitamin D 3 enhances NK susceptibility of human melanoma cells via Hsp60‐mediated FAS expression

1,25-Dihydroxyvitamin D sub(3) enhances NK susceptibility of human melanoma cells via Hsp60-mediated FAS expression

1,25‐Dihydroxyvitamin D3 enhances NK susceptibility of human melanoma cells via Hsp60‐mediated FAS expression

1,3-비스페닐치오 프로판을 배위자로 한 백금(Ⅱ) 착체의 선택적 세포독성

1-Palmitoyl-2-Linoleoyl-3-Acetyl-rac-Glycerol (PLAG) Rapidly Resolves LPS-Induced Acute Lung Injury Through the Effective Control of Neutrophil Recruitment

The 100 most-cited and 100 most-mentioned COVID-19-related radiological articles: a comparative bibliometric analysis

1168. Cost-effectiveness of high-dose quadrivalent influenza vaccine versus standard-dose quadrivalent influenza vaccine for older people in a country with high influenza vaccination rate

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

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