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Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission

Nature materials, 2012-11, Vol.11 (11), p.957-962

2012

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Diluted II-VI oxide semiconductors with multiple band gaps

Physical review letters, 2003-12, Vol.91 (24), p.246403-246403, Article 246403

2003

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Orientation-Dependent Growth Mechanisms of Graphene Islands on Ir(111)

Nano letters, 2015-01, Vol.15 (1), p.170-175

2015

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Valence band anticrossing in GaBixAs1−x

Applied physics letters, 2007-07, Vol.91 (5)

2007

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Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85018

2015

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THz transient photoconductivity of the III-V dilute nitride GaPyAs1−y−xNx

Semiconductor science and technology, 2018-12, Vol.33 (12)

2018

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Multiband GaNAsP quaternary alloys

Applied physics letters, 2006-02, Vol.88 (9), p.092110-092110-3

2006

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Mg doping of GaN by molecular beam epitaxy

Journal of physics. D, Applied physics, 2011-04, Vol.44 (13), p.135406

2011

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Crystal structure and properties of CdxZn1−xO alloys across the full composition range

Applied physics letters, 2013-06, Vol.102 (23)

2013

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Effects of point defects on thermal and thermoelectric properties of InN

Applied physics letters, 2011-01, Vol.98 (1), p.012108-012108-3

2011

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THz transient photoconductivity of the III–V dilute nitride GaP y As 1− y − x N x

Semiconductor science and technology, 2018-12, Vol.33 (12), p.125009

2018

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Embedded Binary Eutectic Alloy Nanostructures: A New Class of Phase Change Materials

Nano letters, 2010-08, Vol.10 (8), p.2794-2798

2010

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Ferromagnetism in Ga1-xMnxP : Evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

Physical review letters, 2005-11, Vol.95 (20), p.207204.1-207204.4

2005

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On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)

MRS communications, 2015-09, Vol.5 (3), p.539-546

2015

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Electronic structure of the dilute magnetic semiconductor Ga1−xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Physical review. B, 2018-04, Vol.97 (15)

2018

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Ferromagnetic Ga1−xMnxAs produced by ion implantation and pulsed-laser melting

Applied physics letters, 2003-02, Vol.82 (8), p.1251-1253

2003

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Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism

Physical review letters, 2008-08, Vol.101 (8), p.087203-087203

2008

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Metal-Induced Assembly of a Semiconductor Island Lattice: Ge Truncated Pyramids on Au-Patterned Si

Nano letters, 2005-10, Vol.5 (10), p.2070-2073

2005

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Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Applied physics letters, 2013-03, Vol.102 (10)

2013

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Mutual passivation of electrically active and isovalent impurities

Nature materials, 2002-11, Vol.1 (3), p.185-189

2002

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Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing

Physical review. B, Condensed matter and materials physics, 2008-08, Vol.78 (7), Article 075201

2008

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Chemical Nanomachining of Silicon by Gold-Catalyzed Oxidation

Nano letters, 2007-07, Vol.7 (7), p.2009-2013

2007

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Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting

Physica. B, Condensed matter, 2006-04, Vol.376, p.630-634

2006

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Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

Physical review letters, 2005-11, Vol.95 (20), p.207204-207204

2005

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Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Journal of applied physics, 2024-01, Vol.135 (4)

2024

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Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission

Diluted II-VI oxide semiconductors with multiple band gaps

Orientation-Dependent Growth Mechanisms of Graphene Islands on Ir(111)

Valence band anticrossing in GaBixAs1−x

Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides

THz transient photoconductivity of the III-V dilute nitride GaPyAs1−y−xNx

Multiband GaNAsP quaternary alloys

Mg doping of GaN by molecular beam epitaxy

Crystal structure and properties of CdxZn1−xO alloys across the full composition range

Effects of point defects on thermal and thermoelectric properties of InN

THz transient photoconductivity of the III–V dilute nitride GaP y As 1− y − x N x

Embedded Binary Eutectic Alloy Nanostructures: A New Class of Phase Change Materials

Ferromagnetism in Ga1-xMnxP : Evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

On the rotational alignment of graphene domains grown on Ge(110) and Ge(111)

Electronic structure of the dilute magnetic semiconductor Ga1−xMnxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Ferromagnetic Ga1−xMnxAs produced by ion implantation and pulsed-laser melting

Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism

Metal-Induced Assembly of a Semiconductor Island Lattice: Ge Truncated Pyramids on Au-Patterned Si

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

Mutual passivation of electrically active and isovalent impurities

Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing

Chemical Nanomachining of Silicon by Gold-Catalyzed Oxidation

Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting

Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

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