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Atomic layer annealing with radio-frequency substrate bias for control of grain morphology in gallium nitride thin films

MRS bulletin, 2023-11, Vol.48 (11), p.1164-1171

2023

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Identification of Star Defects in Gallium Nitride with HREBSD and ECCI

Microscopy and microanalysis, 2021-04, Vol.27 (2), p.257-265

2021

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Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

MRS bulletin, 2009-05, Vol.34 (5), p.318-323

2009

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Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

Journal of materials research, 2017-05, Vol.32 (9), p.1611-1617

2017

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Advances in Bulk Crystal Growth of AlN and GaN

MRS bulletin, 2009-04, Vol.34 (4), p.259-265

2009

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Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

International journal of microwave and wireless technologies, 2018-06, Vol.10 (5-6), p.666-673

2018

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InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications

International journal of microwave and wireless technologies, 2018-02, Vol.10 (1), p.39-46

2018

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Ultrawide-bandgap semiconductors: An overview

Journal of materials research, 2021-12, Vol.36 (23), p.4601-4615

2021

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Effect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes

Microscopy and microanalysis, 2021-08, Vol.27 (S1), p.1760-1761

2021

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Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)

Journal of materials research, 2023-04, Vol.38 (7), p.1780-1791

2023

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Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

Journal of materials research, 2021-12, Vol.36 (24), p.4919-4926

2021

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Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)

Journal of materials research, 2023-01, Vol.38 (2), p.429-438

2023

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Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

Journal of materials research, 2015-10, Vol.30 (19), p.2846-2858

2015

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Current Status of GaN-Based Solid-State Lighting

MRS bulletin, 2009-02, Vol.34 (2), p.101-107

Nakamura, Shuji

2009

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Controlled growth of ZnO layers and nanowires using methane as reducing precursor

Journal of materials research, 2017-11, Vol.32 (21), p.4087-4094

2017

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MRS Communications Abstracts

MRS bulletin, 2019, Vol.44 (1), p.76-78

2019

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RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

International journal of microwave and wireless technologies, 2021-07, Vol.13 (6), p.517-522

2021

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Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

MRS bulletin, 2009-05, Vol.34 (5), p.313-317

2009

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A pathway to compound semiconductor additive manufacturing

MRS communications, 2019-09, Vol.9 (3), p.1001-1007

2019

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Growth defects in GaN films on sapphire: The probable origin of threading dislocations

Journal of materials research, 1996-03, Vol.11 (3), p.580-592

1996

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GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

MRS bulletin, 2009-05, Vol.34 (5), p.328-333

2009

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Microstructural Characterization of GaN on (0001) Sapphire

Microscopy and microanalysis, 1998-07, Vol.4 (S2), p.628-629

1998

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Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Journal of materials research, 1993-10, Vol.8 (10), p.2613-2616

1993

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Transmission Electron Holography of a GaN/AlxGal-xN Heterostructure

Microscopy and microanalysis, 1998-07, Vol.4 (S2), p.132-133

1998

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Direct Observation of Threading Dislocations in Gan by High Resolution z-contrast imaging

Microscopy and microanalysis, 1998-07, Vol.4 (S2), p.660-661

1998

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Atomic layer annealing with radio-frequency substrate bias for control of grain morphology in gallium nitride thin films

Identification of Star Defects in Gallium Nitride with HREBSD and ECCI

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

Advances in Bulk Crystal Growth of AlN and GaN

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications

Ultrawide-bandgap semiconductors: An overview

Effect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes

Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)

Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)

Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

Current Status of GaN-Based Solid-State Lighting

Controlled growth of ZnO layers and nanowires using methane as reducing precursor

MRS Communications Abstracts

RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

A pathway to compound semiconductor additive manufacturing

Growth defects in GaN films on sapphire: The probable origin of threading dislocations

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

Microstructural Characterization of GaN on (0001) Sapphire

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

Transmission Electron Holography of a GaN/AlxGal-xN Heterostructure

Direct Observation of Threading Dislocations in Gan by High Resolution z-contrast imaging

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