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Optoelectronic Coincidence Detection with Two‐Dimensional Bi2O2Se Ferroelectric Field‐Effect Transistors

Advanced functional materials, 2021-10, Vol.31 (40), p.n/a

2021

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Nonvolatile manipulation of electronic and ferromagnetic properties of NiO–Ni epitaxial film by ferroelectric polarization charge

Applied physics letters, 2020-12, Vol.117 (23)

2020

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Excellent structural, optical, and electrical properties of Nd-doped BaSnO3 transparent thin films

Applied physics letters, 2018-11, Vol.113 (20)

2018

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Large ferroelectric-polarization-modulated photovoltaic effects in bismuth layered multiferroic/semiconductor heterostructure devices

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-03, Vol.9 (9), p.3287-3294

2021

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Electric-field-controllable nonvolatile multilevel resistance switching of Bi0.93Sb0.07/PMN-0.29PT(111) heterostructures

Applied physics letters, 2018-11, Vol.113 (22)

2018

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Optimization of the pulsed laser deposition process of In2O3 thin films for ferroelectric field effect device applications

Journal of materials science. Materials in electronics, 2021, Vol.32 (2), p.1659-1667

2021

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Multistate resistance switching in Bi/PMN–PT(111) heterostructures by electric and magnetic field

Journal of materials science. Materials in electronics, 2020-02, Vol.31 (4), p.3585-3589

2020

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Silencing the SpMPK1, SpMPK2, and SpMPK3 genes in tomato reduces abscisic acid-mediated drought tolerance

International journal of molecular sciences, 2013-11, Vol.14 (11), p.21983-21996

2013

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Thermodynamic analysis of a mechanical vapor recompression evaporation system coupled with crystalization for salt separation

Asia-Pacific journal of chemical engineering, 2018-09, Vol.13 (5), p.n/a

2018

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Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Advanced electronic materials, 2019-07, Vol.5 (7), p.n/a

2019

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Balanced development of piezoelectricity and Curie temperature in (1 − x)K0.44Na0.52Li0.04Nb0.96Sb0.04O3–xBi0.25Na0.25Ba0.5ZrO3 lead-free piezoelectric ceramics

Journal of materials science. Materials in electronics, 2018, Vol.29 (2), p.1341-1348

2018

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Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching

npj quantum materials, 2018-10, Vol.3 (1), Article 52

2018

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Strain-mediated electric-field control of the electronic transport properties of 5 d iridate thin films of SrIrO3

Journal of applied physics, 2023-01, Vol.133 (1)

2023

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Magnetotransport and magnetic properties of the layered noncollinear antiferromagnetic Cr2Se3single crystals

Journal of physics. Condensed matter, 2020-11, Vol.32 (47)

2020

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Coexistence of logarithmic and SdH quantum oscillations in ferromagnetic Cr-doped tellurium single crystals

Journal of physics. Condensed matter, 2023-06, Vol.35 (24), p.245701

2023

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Strain-mediated electric-field control of the electronic transport properties of 5d iridate thin films of SrIrO3

Journal of applied physics, 2023-01, Vol.133 (1)

2023

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Structural, dielectric, ferroelectric, and magnetic properties of lead-free (1-x)BiFe0.95Ga0.03Mn0.02O3−xBaTiO3 ceramics

Ceramics international, 2020-06, Vol.46 (8), p.12705-12710

2020

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Hydrogenation of Silicon Tetrachloride in the Presence of Silicon: Thermodynamic and Experimental Investigation

Industrial & engineering chemistry research, 2014-07, Vol.53 (27), p.10943-10953

2014

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Erratum: “Nonvolatile manipulation of electronic and ferromagnetic properties of NiO-Ni epitaxial film by ferroelectric polarization charge” [Appl. Phys. Lett. 117, 232901 (2020)]

Applied physics letters, 2021-01, Vol.118 (1)

2021

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Electric-field tuning of nonvolatile resistance change and magnetic properties of LaMnO3/PMN-PT(0 1 1) heterostructure

Materials letters, 2019-11, Vol.254, p.89-91

2019

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Structural, electrical, and optical properties of RxBa1−xSnO3 (R = La, Nd, Sm, Er) transparent thin films

Journal of materials science. Materials in electronics, 2023, Vol.34 (2), p.91, Article 91

2023

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Reactive Distillation Column for Disproportionation of Trichlorosilane to Silane: Reducing Refrigeration Load with Intermediate Condensers

Industrial & engineering chemistry research, 2013-05, Vol.52 (18), p.6211-6220

2013

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Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

Journal of Materiomics, 2018-12, Vol.4 (4), p.412-417

2018

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Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

ACS applied materials & interfaces, 2018-09, Vol.10 (38), p.32809-32817

2018

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The effects of oxygen pressure on the structural, magnetic, and ferroelectric properties of 0.55BiFe0.95Ga0.03Mn0.02O3–0.45BaTiO3 thin films

Materials letters, 2020-04, Vol.265, p.127443, Article 127443

2020

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Optoelectronic Coincidence Detection with Two‐Dimensional Bi2O2Se Ferroelectric Field‐Effect Transistors

Nonvolatile manipulation of electronic and ferromagnetic properties of NiO–Ni epitaxial film by ferroelectric polarization charge

Excellent structural, optical, and electrical properties of Nd-doped BaSnO3 transparent thin films

Large ferroelectric-polarization-modulated photovoltaic effects in bismuth layered multiferroic/semiconductor heterostructure devices

Electric-field-controllable nonvolatile multilevel resistance switching of Bi0.93Sb0.07/PMN-0.29PT(111) heterostructures

Optimization of the pulsed laser deposition process of In2O3 thin films for ferroelectric field effect device applications

Multistate resistance switching in Bi/PMN–PT(111) heterostructures by electric and magnetic field

Silencing the SpMPK1, SpMPK2, and SpMPK3 genes in tomato reduces abscisic acid-mediated drought tolerance

Thermodynamic analysis of a mechanical vapor recompression evaporation system coupled with crystalization for salt separation

Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Balanced development of piezoelectricity and Curie temperature in (1 − x)K0.44Na0.52Li0.04Nb0.96Sb0.04O3–xBi0.25Na0.25Ba0.5ZrO3 lead-free piezoelectric ceramics

Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching

Strain-mediated electric-field control of the electronic transport properties of 5 d iridate thin films of SrIrO3

Magnetotransport and magnetic properties of the layered noncollinear antiferromagnetic Cr2Se3single crystals

Coexistence of logarithmic and SdH quantum oscillations in ferromagnetic Cr-doped tellurium single crystals

Strain-mediated electric-field control of the electronic transport properties of 5d iridate thin films of SrIrO3

Structural, dielectric, ferroelectric, and magnetic properties of lead-free (1-x)BiFe0.95Ga0.03Mn0.02O3−xBaTiO3 ceramics

Hydrogenation of Silicon Tetrachloride in the Presence of Silicon: Thermodynamic and Experimental Investigation

Erratum: “Nonvolatile manipulation of electronic and ferromagnetic properties of NiO-Ni epitaxial film by ferroelectric polarization charge” [Appl. Phys. Lett. 117, 232901 (2020)]

Electric-field tuning of nonvolatile resistance change and magnetic properties of LaMnO3/PMN-PT(0 1 1) heterostructure

Structural, electrical, and optical properties of RxBa1−xSnO3 (R = La, Nd, Sm, Er) transparent thin films

Reactive Distillation Column for Disproportionation of Trichlorosilane to Silane: Reducing Refrigeration Load with Intermediate Condensers

Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

The effects of oxygen pressure on the structural, magnetic, and ferroelectric properties of 0.55BiFe0.95Ga0.03Mn0.02O3–0.45BaTiO3 thin films

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