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Kinetic and Reaction Pathway Analysis in the Application of Botulinum Toxin A for Wound Healing

Journal of Toxicology, 2012-01, Vol.2012 (2012), p.82-90

2012

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Cannabinoid Hyperemesis Syndrome: Case Report of a Paradoxical Reaction with Heavy Marijuana Use

Case Reports in Medicine, 2012-01, Vol.2012 (2012), p.289-291-274

2012

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Prediction of gypsum solubility and scaling limits in saline waters

Journal of chemical and engineering data, 1979-07, Vol.24 (3), p.187-192

1979

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On serving members in embargoed countries

IEEE spectrum, 2003-10, Vol.40 (10), p.7

Adler, Michael S

2003

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Sensitivity of Marginal Oscillator Spectrometers

Review of scientific instruments, 1971-05, Vol.42 (5), p.704-712

1971

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The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

IEEE transactions on electron devices, 1984-06, Vol.31 (6), p.821-828

1984

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Avoiding the Perils of Imaging System Implementations

The information management journal, 2000-10, Vol.34 (4), p.4

Adler, Michael S

2000

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Accurate calculations of the forward drop and power dissipation in thyristors

IEEE transactions on electron devices, 1978-01, Vol.25 (1), p.16-22

Adler, M.S.

1978

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Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.310-315

1991

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The evolution of power device technology

IEEE transactions on electron devices, 1984-11, Vol.31 (11), p.1570-1591

1984

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A comparison between BIMOS device types

IEEE transactions on electron devices, 1986-02, Vol.33 (2), p.286-293

Adler, M.S.

1986

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A self-aligned short process for insulated-gate bipolar transistors

IEEE transactions on electron devices, 1992-06, Vol.39 (6), p.1317-1321

1992

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Measurements of the p-n product in heavily doped epitaxial emitters

IEEE transactions on electron devices, 1984-01, Vol.31 (1), p.3-17

1984

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n-channel lateral insulated gate transistors: Part I-Steady-state characteristics

IEEE transactions on electron devices, 1986-12, Vol.33 (12), p.1956-1963

1986

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Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

IEEE electron device letters, 1990-05, Vol.11 (5), p.184-186

1990

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A method for terminating mesh lines in finite difference formulations of the semiconductor device equations

Solid-state electronics, 1980-01, Vol.23 (8), p.845-853

Adler, Michael S.

1980

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Details of the plasma-spreading process in thyristors

IEEE transactions on electron devices, 1980-02, Vol.27 (2), p.495-502

Adler, M.S.

1980

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The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors

IEEE electron device letters, 1988-09, Vol.9 (9), p.450-452

1988

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Power semiconductor switching devices-A comparison based on inductive switching

IEEE transactions on electron devices, 1982-06, Vol.29 (6), p.947-952

1982

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Lateral HVIC with 1200-V bipolar and field-effect devices

IEEE transactions on electron devices, 1986-12, Vol.33 (12), p.1992-2001

1986

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Theory and breakdown voltage for planar devices with a single field limiting ring

IEEE transactions on electron devices, 1977-02, Vol.24 (2), p.107-113

1977

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Measurement of heavy doping parameters in silicon by electron-beam-induced current

IEEE transactions on electron devices, 1980-05, Vol.27 (5), p.983-990

1980

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A new noncapacitive method of determining net surface charge densities using floating field ring devices

IEEE transactions on electron devices, 1978-09, Vol.25 (9), p.1166-1169

Adler, M.S.

1978

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Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions

IEEE transactions on electron devices, 1975-10, Vol.22 (10), p.910-916

1975

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Book review: Preserving Digital Information: A How-To-Do-It Manual

Information Management Journal, 2001, Vol.35 (3), p.52

Adler, Michael S

2001

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Kinetic and Reaction Pathway Analysis in the Application of Botulinum Toxin A for Wound Healing

Cannabinoid Hyperemesis Syndrome: Case Report of a Paradoxical Reaction with Heavy Marijuana Use

Prediction of gypsum solubility and scaling limits in saline waters

On serving members in embargoed countries

Sensitivity of Marginal Oscillator Spectrometers

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

Avoiding the Perils of Imaging System Implementations

Accurate calculations of the forward drop and power dissipation in thyristors

Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors

The evolution of power device technology

A comparison between BIMOS device types

A self-aligned short process for insulated-gate bipolar transistors

Measurements of the p-n product in heavily doped epitaxial emitters

n-channel lateral insulated gate transistors: Part I-Steady-state characteristics

Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

A method for terminating mesh lines in finite difference formulations of the semiconductor device equations

Details of the plasma-spreading process in thyristors

The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors

Power semiconductor switching devices-A comparison based on inductive switching

Lateral HVIC with 1200-V bipolar and field-effect devices

Theory and breakdown voltage for planar devices with a single field limiting ring

Measurement of heavy doping parameters in silicon by electron-beam-induced current

A new noncapacitive method of determining net surface charge densities using floating field ring devices

Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions

Book review: Preserving Digital Information: A How-To-Do-It Manual

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