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SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

2010 International Electron Devices Meeting, 2010, p.30.5.1-30.5.4

2010

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Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.401-404

2014

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Novel collector design for high-speed SiGe:C HBTs

Digest. International Electron Devices Meeting, 2002, p.775-778

2002

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Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4

2012

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SiGe HBT with fx/fmax of 505 GHz/720 GHz

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.3.1.1-3.1.4

2016

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A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module

Digest. International Electron Devices Meeting, 2002, p.783-786

2002

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A low-parasitic collector construction for high-speed SiGe:C HBTs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.251-254

2004

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A novel buried oxide isolation for monolithic RF inductors on silicon

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.535-539

1998

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Redistribution of implanted and thermally predeposited dopants during high pressure oxidation

Physica status solidi. A, Applied research, 1986-10, Vol.97 (2), p.K141-K144

1986

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A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009, p.166-169

2009

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High performance integrated spiral inductors based on a minimum AC difference voltage principle

2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397), 2000, p.71-74

2000

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Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.239-242

2004

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Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology

OFC 2014, 2014, p.1-3

2014

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Selectively Grown Short Channel Vertical SI-P MOS Transistor for Future Three Dimensional Self-Aligned Integration

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference, 1996, p.943-946

1996

Volltextzugriff (PDF)

SiGe BiCMOS Technology with 3.0 ps Gate Delay

2007 IEEE International Electron Devices Meeting, 2007, p.651-654

2007

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Selectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances

28th European Solid-State Device Research Conference, 1998, p.568-571

1998

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Reducing Transient Enhanced Diffusion of Boron in Si/SiGe Heterojunction Bipolar Transistors by BBR3 Predeposition for External Base Doping

28th European Solid-State Device Research Conference, 1998, p.260-263

1998

Volltextzugriff (PDF)

Nitrogen incorporation during N sub(2)O- and NO-oxidation of silicon at temperatures down to 600 degree C

Microelectronics, 1996-01, Vol.27 (7), p.647-656

1996

Volltextzugriff (PDF)

A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

2006 International Electron Devices Meeting, 2006, p.1-4

2006

Volltextzugriff (PDF)

Nitrogen incorporation during N20- and NO-oxidation of silicon at temperatures down to 600°C

Microelectronics, 1996-10, Vol.27 (7), p.647-656

1996

Volltextzugriff (PDF)

HBT before CMOS, a new modular SiGe BiCMOS integration scheme

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.22.2.1-22.2.4

2001

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A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004, p.241-244

2004

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Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.561-564

1999

Volltextzugriff (PDF)

Redistribution of implanted and thermally predeposited dopants during high pressure oxidation

Physica status solidi. A, Applied research, 1986-10, Vol.97 (2), p.K141-K144

1986

Volltextzugriff (PDF)

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SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substrates

Novel collector design for high-speed SiGe:C HBTs

Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process

SiGe HBT with fx/fmax of 505 GHz/720 GHz

A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module

A low-parasitic collector construction for high-speed SiGe:C HBTs

A novel buried oxide isolation for monolithic RF inductors on silicon

Redistribution of implanted and thermally predeposited dopants during high pressure oxidation

A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

High performance integrated spiral inductors based on a minimum AC difference voltage principle

Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS

Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology

Selectively Grown Short Channel Vertical SI-P MOS Transistor for Future Three Dimensional Self-Aligned Integration

SiGe BiCMOS Technology with 3.0 ps Gate Delay

Selectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances

Reducing Transient Enhanced Diffusion of Boron in Si/SiGe Heterojunction Bipolar Transistors by BBR3 Predeposition for External Base Doping

Nitrogen incorporation during N sub(2)O- and NO-oxidation of silicon at temperatures down to 600 degree C

A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

Nitrogen incorporation during N20- and NO-oxidation of silicon at temperatures down to 600°C

HBT before CMOS, a new modular SiGe BiCMOS integration scheme

A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors

Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process

Redistribution of implanted and thermally predeposited dopants during high pressure oxidation

A modular, low-cost SiGe:C BiCMOS process featuring high-fTand high-BVCEO transistors

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