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Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping

Materials science forum, 2009, Vol.615-617, p.255-258

2009

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Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates

Materials science forum, 2009, Vol.615-617, p.275-278

2009

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Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.269-272

2015

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On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications

Materials science forum, 2009, Vol.615-617, p.133-136

2009

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Optical evaluation of pretreated InGaN quantum well structures

MRS proceedings, 2003, Vol.798, Article Y5.59

2003

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On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russia, 2013, Vol.740-742, p.173-176

2013

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Overview of U.S. Department of Energy Research Subprogram in CO2 Capture, Re-use and Disposal

Waste management (Elmsford), 1997, Vol.17 (5-6), p.289-293

BERGMAN, P

1997

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Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS

Materials science forum, 2014, Vol.778-780, p.281-284

2014

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High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

Materials science forum, 2011, Vol.679-680, p.115-118

2011

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High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers

Materials science forum, 2012, Vol.717-720, p.293-296

2012

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Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

Materials science forum, 2012, Vol.717-720, p.157-160

2012

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Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

Materials science forum, 2012, Vol.717-720, p.289-292

2012

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Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

Materials science forum, 2011, Vol.679-680, p.205-208

2011

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The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers

Materials science forum, 2012, Vol.717-720, p.161-164

2012

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Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers

Materials science forum, 2012, Vol.717-720, p.285-288

2012

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United States policy for mitigating global climate change

Waste management (Elmsford), 1997, Vol.17 (5-6), p.309-314

1997

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High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.285-288

2007

Volltextzugriff (PDF)

The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.237-240

2008

Volltextzugriff (PDF)

Electronic Structure and Temperature Dependence of Excitons in GaN

MRS proceedings, 1996, Vol.423, Article 675

1996

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Dynamics of the Nitrogen Bound Excitons in 6H and 3C SiC

MRS proceedings, 1994, Vol.339, Article 541

1994

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The role of defects on optical and electrical properties of SiC

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), 2000, p.283-290

2000

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Cellular Internet of Things: Technologies, Standards, and Performance

Olof Liberg, Marten Sundberg, Eric Wang, Johan Bergman, Joachim Sachs

1, 2017

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Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

IEEE transactions on device and materials reliability, 2012-09, Vol.12 (3), p.538-546

2012

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Evaluating Self-Supervised Learning Methods for Downstream Classification of Neoplasia in Barrett's Esophagus

2021 IEEE International Conference on Image Processing (ICIP), 2021, p.66-70

2021

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5G Reduced Capability Devices: Analysis of Blocking Probability for Control Channels

2023 IEEE Wireless Communications and Networking Conference (WCNC), 2023, p.1-6

2023

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Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping

Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates

Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications

Optical evaluation of pretreated InGaN quantum well structures

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

Overview of U.S. Department of Energy Research Subprogram in CO2 Capture, Re-use and Disposal

Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC

The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers

Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers

United States policy for mitigating global climate change

High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

Electronic Structure and Temperature Dependence of Excitons in GaN

Dynamics of the Nitrogen Bound Excitons in 6H and 3C SiC

The role of defects on optical and electrical properties of SiC

Cellular Internet of Things: Technologies, Standards, and Performance

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Evaluating Self-Supervised Learning Methods for Downstream Classification of Neoplasia in Barrett's Esophagus

5G Reduced Capability Devices: Analysis of Blocking Probability for Control Channels

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