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A 290 GHz Low Noise Amplifier Operating above f/2 in 130 nm SiGe Technology for Sub-THz/THz Receivers
2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2021, p.223-226
2021
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A SiGe BiCMOS D-Band LNA with Gain Boosted by Local Feedback in Common-Emitter Transistors
2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2023, p.133-136
2023
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5GHz SRAM for High-Performance Compute Platform in 5nm CMOS
2022 IEEE Custom Integrated Circuits Conference (CICC), 2022, p.1-2
2022
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180 GHz Low-loss Copper Nanowire CPW Interconnects
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.1034-1036
2022
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A 334uW 0.158mm2 Saber Learning with Rounding based Post-Quantum Crypto Accelerator
2022 IEEE Custom Integrated Circuits Conference (CICC), 2022, p.1-2
2022
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Data reorganization in memory using 3D-stacked DRAM
2015 ACM/IEEE 42nd Annual International Symposium on Computer Architecture (ISCA), 2015, p.131-143
2015
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On-Silicon Photonic Integrated Circuit toward On-chip Interconnection and Distributed Computing
2021 Symposium on VLSI Technology, 2021, p.1-2
2021
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A 256Gb/s/mm-shoreline AIB-Compatible 16nm FinFET CMOS Chiplet for 2.5D Integration with Stratix 10 FPGA on EMIB and Tiling on Silicon Interposer
2021 IEEE Custom Integrated Circuits Conference (CICC), 2021, p.1-2
2021
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30.6 A 6V Swing 3.6% THD >40GHz Driver with 4.5× Bandwidth Extension for a 272Gb/s Dual-Polarization 16-QAM Silicon Photonic Transmitter
2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.484-486
2019
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Electrically Pumped Quantum-Dot Lasers Grown on CMOS-Compatible 300 mm Si Wafers
2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2
2022
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RFIC Plenary Speaker 1
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2022, p.1-1
2022
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A 38GHz Deep Back-Off Efficiency Enhancement PA with Three-Way Doherty Network Synthesis Achieving 11.3dBm Average Output Power and 14.7% Average Efficiency for 5G NR OFDM
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2022, p.239-242
2022
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110 GHz Nanowire-Based Integrated Via Technology for 3D Silicon Integration
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.587-590
2022
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In-situ Microplastic Detection Sensor based on Cascaded Microring Resonators
OCEANS 2021: San Diego – Porto, 2021, p.1-5
2021
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SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits Above 110 GHz
2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, p.669-672
2021
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Portable Thermoacoustic Imaging for Biometric Authentication using a 37.3 dBm peak Psat 4.9 GHz Power Amplifier in 55nm BiCMOS
2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2021, p.7-10
2021
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Plenary Speaker 1
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2018, p.1-2
2018
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Carrier Recombination Processes in 2.3-µm Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)
2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2
2021
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High Temperature Operation of Membrane Photonic Integrated Circuits with Buried-Ridge-Waveguide on Si
2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2
2022
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Numerical Simulation of a Beam Splitter on a Silicon Chip for the Terahertz Wavelength Range
2022 Photonics & Electromagnetics Research Symposium (PIERS), 2022, p.892-898
2022
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Compendium of Ball Aerospace Total Ionizing Dose Test Results
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018, p.1-3
2018
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NoC Architectures for Silicon Interposer Systems: Why Pay for more Wires when you Can Get them (from your interposer) for Free?
2014 47th Annual IEEE/ACM International Symposium on Microarchitecture, 2014, p.458-470
2014
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A 165-230GHz SiGe amplifier-doubler chain with 5dBm peak output power
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2016, p.302-305
2016
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(Why do we need) Wireless Heterogeneous Integration (anyway?)
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.256-257
2022
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An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
IEEE Conferences, 2015, p.T176-T177
2015
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