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Very narrow graded-barrier single quantum well lasers grown by metalorganic chemical vapor deposition

Applied physics letters, 1982-11, Vol.41 (10), p.912-914

1982

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Polarity control of ZnO films on (0001) Al{sub 2}O{sub 3} by Cr-compound intermediate layers

Applied physics letters, 2007-05, Vol.90 (20)

2007

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High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition

Applied physics letters, 1982-02, Vol.40 (3), p.208-210

1982

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Plasma-enhanced chemical vapor deposition of low-resistive tungsten thin films

Applied physics letters, 1991-02, Vol.58 (8), p.837-839

1991

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Ultrafast nonadiabatic dynamics of λ-DNA upon low energy proton irradiation

Applied physics letters, 2022-01, Vol.120 (4)

2022

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Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Applied physics letters, 2015-10, Vol.107 (14)

2015

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Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

Applied physics letters, 2012-09, Vol.101 (13)

2012

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GeSn-on-insulator substrate formed by direct wafer bonding

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Applied physics letters, 2012-07, Vol.101 (4), p.43501

2012

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Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor

Applied physics letters, 2009-10, Vol.95 (17), p.172514-172514-3

2009

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Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

Applied physics letters, 2020-07, Vol.117 (2)

2020

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Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering

Applied physics letters, 2004-12, Vol.85 (23), p.5628-5630

2004

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High-performance solar-blind photodetector based on amorphous BN in harsh environment operations

Applied physics letters, 2024-01, Vol.124 (4)

2024

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Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

Applied physics letters, 2005-04, Vol.86 (15), p.151917-151917-3

2005

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In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

Applied physics letters, 2012-11, Vol.101 (21)

2012

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Simple lithographic approach for subwavelength structure antireflection

Applied physics letters, 2007-08, Vol.91 (6), p.061105-061105-3

2007

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Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

Applied physics letters, 2006-10, Vol.89 (15), p.151921-151921-3

2006

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Carrier concentration dependence of terahertz transmission on conducting ZnO films

Applied physics letters, 2008-11, Vol.93 (21)

2008

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Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

Applied physics letters, 2015-03, Vol.106 (9)

2015

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High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Effect of nitride passivation on the visible photoluminescence from Si-nanocrystals

Applied physics letters, 2004-10, Vol.85 (16), p.3408-3410

2004

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Very narrow graded-barrier single quantum well lasers grown by metalorganic chemical vapor deposition

Polarity control of ZnO films on (0001) Al{sub 2}O{sub 3} by Cr-compound intermediate layers

High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition

Plasma-enhanced chemical vapor deposition of low-resistive tungsten thin films

Ultrafast nonadiabatic dynamics of λ-DNA upon low energy proton irradiation

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

GeSn-on-insulator substrate formed by direct wafer bonding

Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor

Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering

High-performance solar-blind photodetector based on amorphous BN in harsh environment operations

Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering

In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN

Simple lithographic approach for subwavelength structure antireflection

Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition

Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature

Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

Carrier concentration dependence of terahertz transmission on conducting ZnO films

Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

High-performance self-aligned inversion-channel In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO{sub 2}

Effect of nitride passivation on the visible photoluminescence from Si-nanocrystals

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