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Negative Capacitance Behavior in a Leaky Ferroelectric

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4416-4422

2016

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Compact Models and the Physics of Nanoscale FETs

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.225-233

2014

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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

IEEE electron device letters, 2008-09, Vol.29 (9), p.1074-1077

2008

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Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4380-4387

2016

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MOSFET Performance Scaling-Part I: Historical Trends

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1391-1400

2008

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ODUSSEAS: a machine learning tool to derive effective temperature and metallicity for M dwarf stars

Astronomy and astrophysics (Berlin), 2020-04, Vol.636, p.A9

2020

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The VDI 3198 indentation test evaluation of a reliable qualitative control for layered compounds

Journal of materials processing technology, 2003-12, Vol.143, p.481-485

2003

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Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1599-1606

2014

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Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1523-1533

2011

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MOSFET Performance Scaling-Part II: Future Directions

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1401-1408

2008

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A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs

IEEE electron device letters, 2014-04, Vol.35 (4), p.440-442

2014

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Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.95-105

2019

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Emergence of Crimean–Congo haemorrhagic fever in Greece

Clinical microbiology and infection, 2010-07, Vol.16 (7), p.843-847

2010

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Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1834-1843

2013

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On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.994-1001

2012

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Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4354-4362

2017

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The impact of hydraulic retention time on the performance of two configurations of anaerobic pond for municipal sewage treatment

Environmental technology, 2022-11, Vol.43 (25), p.3905-3918

2022

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A Soil-Dependent Approach for the Design of Novel Negative Stiffness Seismic Protection Devices

Applied sciences, 2021-07, Vol.11 (14), p.6295

2021

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Effective dimension reduction methods for tumor classification using gene expression data

Bioinformatics (Oxford, England), 2003-03, Vol.19 (5), p.563-570

2003

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Rolling element bearing fault diagnosis using wavelet packets

NDT & E international : independent nondestructive testing and evaluation, 2002-04, Vol.35 (3), p.197-205

2002

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New Optimal Design of Multimode Shunt-Damping Circuits for Enhanced Vibration Control

Signals (Basel), 2022-12, Vol.3 (4), p.830-856

2022

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On Backscattering and Mobility in Nanoscale Silicon MOSFETs

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2762-2769

2009

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Constrained optimal design of seismic base absorbers based on an extended KDamper concept

Engineering structures, 2021-01, Vol.226, p.111312, Article 111312

2021

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On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

IEEE electron device letters, 2001-02, Vol.22 (2), p.95-97

2001

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Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1396-1402

2002

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Negative Capacitance Behavior in a Leaky Ferroelectric

Compact Models and the Physics of Nanoscale FETs

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

MOSFET Performance Scaling-Part I: Historical Trends

ODUSSEAS: a machine learning tool to derive effective temperature and metallicity for M dwarf stars

The VDI 3198 indentation test evaluation of a reliable qualitative control for layered compounds

Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor

Compact Virtual-Source Current-Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

MOSFET Performance Scaling-Part II: Future Directions

A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs

Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

Emergence of Crimean–Congo haemorrhagic fever in Greece

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

The impact of hydraulic retention time on the performance of two configurations of anaerobic pond for municipal sewage treatment

A Soil-Dependent Approach for the Design of Novel Negative Stiffness Seismic Protection Devices

Effective dimension reduction methods for tumor classification using gene expression data

Rolling element bearing fault diagnosis using wavelet packets

New Optimal Design of Multimode Shunt-Damping Circuits for Enhanced Vibration Control

On Backscattering and Mobility in Nanoscale Silicon MOSFETs

Constrained optimal design of seismic base absorbers based on an extended KDamper concept

On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

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