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Broadband optical absorption based on single-sized metal-dielectric-metal plasmonic nanostructures with high-ε″ metals

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Robust half metallic properties in two-dimensional transition metal borocarbides: TMBC (TM = 3d transition metals)

Applied physics letters, 2024-03, Vol.124 (13)

2024

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Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys

Applied physics letters, 2013-12, Vol.103 (23)

2013

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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios

Applied physics letters, 2021-05, Vol.118 (20)

2021

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Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer

Applied physics letters, 2021-10, Vol.119 (16)

2021

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Metal-semiconductor-metal photodetectors based on graphene/ p -type silicon Schottky junctions

Applied physics letters, 2013-01, Vol.102 (1)

2013

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Gain-assisted magnetoplasmonic switching in metal–dielectric–metal plasmonic waveguides

Applied physics letters, 2023-09, Vol.123 (13)

2023

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High efficiency design of metal–insulator–metal metasurface by ResNets-10

Applied physics letters, 2023-11, Vol.123 (21)

2023

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Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum

Applied physics letters, 2021-01, Vol.118 (1)

2021

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Highly efficient UV detection in a metal–semiconductor–metal detector with epigraphene

Applied physics letters, 2022-05, Vol.120 (19)

2022

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Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights

Applied physics letters, 2023-12, Vol.123 (25)

2023

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Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers

Applied physics letters, 2022-03, Vol.120 (12)

2022

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High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Similarities and differences in the fermiology of kagome metals AV3Sb5 (A = K, Rb, Cs) revealed by Shubnikov–de Haas oscillations

Applied physics letters, 2023-07, Vol.123 (1)

2023

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Differentiating contribution of electron–phonon coupling to the thermal boundary conductance of metal–metal–dielectric systems

Applied physics letters, 2024-07, Vol.125 (1)

2024

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Colorizing metals with femtosecond laser pulses

Applied physics letters, 2008-01, Vol.92 (4), p.041914-041914-3

2008

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Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Applied physics letters, 2024-02, Vol.124 (7)

2024

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Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Chern insulators and high Curie temperature Dirac half-metal in two-dimensional metal–organic frameworks

Applied physics letters, 2022-10, Vol.121 (14)

2022

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Enhanced self-powered metal–semiconductor–metal WSe2 photodetectors with asymmetric Schottky contacts through tailored electrode thickness and positioning

Applied physics letters, 2024-05, Vol.124 (22)

2024

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High temperature (500 °C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3

Applied physics letters, 2020-11, Vol.117 (20)

2020

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Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Ferroelectric metals in van der Waals bilayers

Applied physics letters, 2024-06, Vol.124 (25)

2024

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Metamaterial metal-based bolometers

Applied physics letters, 2012-05, Vol.100 (20), p.203508-203508-3

2012

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Broadband optical absorption based on single-sized metal-dielectric-metal plasmonic nanostructures with high-ε″ metals

Robust half metallic properties in two-dimensional transition metal borocarbides: TMBC (TM = 3d transition metals)

Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0{sub 3}-type Heusler alloys

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios

Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer

Metal-semiconductor-metal photodetectors based on graphene/ p -type silicon Schottky junctions

Gain-assisted magnetoplasmonic switching in metal–dielectric–metal plasmonic waveguides

High efficiency design of metal–insulator–metal metasurface by ResNets-10

Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum

Highly efficient UV detection in a metal–semiconductor–metal detector with epigraphene

Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights

Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Similarities and differences in the fermiology of kagome metals AV3Sb5 (A = K, Rb, Cs) revealed by Shubnikov–de Haas oscillations

Differentiating contribution of electron–phonon coupling to the thermal boundary conductance of metal–metal–dielectric systems

Colorizing metals with femtosecond laser pulses

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys

Chern insulators and high Curie temperature Dirac half-metal in two-dimensional metal–organic frameworks

Enhanced self-powered metal–semiconductor–metal WSe2 photodetectors with asymmetric Schottky contacts through tailored electrode thickness and positioning

High temperature (500 °C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3

Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Ferroelectric metals in van der Waals bilayers

Metamaterial metal-based bolometers

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