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Study of degradation mechanism of blue light emitting diodes

Thin solid films, 2005-07, Vol.483 (1), p.378-381

2005

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Nature of native oxide on GaN surface and its reaction with Al

Applied physics letters, 1996-11, Vol.69 (21), p.3212-3214

1996

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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Solid state communications, 2007, Vol.142 (4), p.206-211

2007

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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films

Solid state communications, 2007-04, Vol.142 (4), p.206-211

2007

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Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Applied physics letters, 2005-10, Vol.87 (16), p.161901-161901-3

2005

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Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Thin solid films, 2005-01, Vol.471 (1), p.336-341

2005

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Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-12, Vol.145 (1-3), p.48-56

2007

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Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001, Vol.308, p.93-97

2001

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Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.114-117

2007

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Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Journal of applied physics, 2005-07, Vol.98 (1), p.016109-016109-3

2005

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Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Materials science & engineering. B, Solid-state materials for advanced technology, 2007, Vol.145 (1), p.48-56

2007

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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Journal of crystal growth, 2007-04, Vol.301 (SPEC. ISS.), p.457-460

2007

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Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Physica status solidi, 2007, Vol.244 (8), p.2892

2007

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Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Thin solid films, 2006-10, Vol.515 (2), p.603-606

2006

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Importance of ITO surface conditions for the interaction with thin CuPc layers

Organic electronics, 2005-08, Vol.6 (4), p.175-181

2005

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Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Applied surface science, 2004-03, Vol.226 (4), p.331-334

2004

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Influence of dislocation density on photoluminescence intensity of GaN

Journal of crystal growth, 2005-05, Vol.278 (1), p.406-410

2005

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Diffusion of nitrogen in gallium arsenide

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.367-370

2003

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Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001-12, Vol.308-310, p.93-97

2001

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Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy

Solid-state electronics, 2003-03, Vol.47 (3), p.539-542

2003

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Characterisation of surface morphological defects in MBE-grown GaN 0.1As 0.9 layers on GaAs

Applied surface science, 2000, Vol.166 (1), p.259-262

2000

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Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Superlattices and microstructures, 2012-07, Vol.52 (1), p.70-77

2012

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Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateral inhomogeneities

Journal of crystal growth, 2001-07, Vol.227, p.381-385

2001

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Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

Applied surface science, 2000-10, Vol.166 (1), p.317-321

2000

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Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.685-688

1999

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Study of degradation mechanism of blue light emitting diodes

Nature of native oxide on GaN surface and its reaction with Al

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq 3 films

Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films

Influence of Al ∕ N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Preparation and characterization of the ITO surface and the Al/Alq3/ITO heterostructure for OLEDs

Characterization of Al xGa 1− xN layers grown by molecular beam epitaxy

Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN

Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Preparation and characterization of the ITO surface and the Al/Alq 3/ITO heterostructure for OLEDs

Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy

Intersubband absorption at 1.5-3.5 µm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire

Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Importance of ITO surface conditions for the interaction with thin CuPc layers

Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Influence of dislocation density on photoluminescence intensity of GaN

Diffusion of nitrogen in gallium arsenide

Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy

Characterisation of surface morphological defects in MBE-grown GaN 0.1As 0.9 layers on GaAs

Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateral inhomogeneities

Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

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