UB Paderborn / Katalog / Suche / in CDI

Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.60-71

2023

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Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices

Journal of computational electronics, 2011-06, Vol.10 (1-2), p.65-97

Ancona, M. G.

2011

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Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2151-2157

2019

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Nonlinear Thermoelectroelastic Analysis of III-N Semiconductor Devices

IEEE journal of the Electron Devices Society, 2017-09, Vol.5 (5), p.320-334

Ancona, M. G.

2017

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Packing density of HS(CH2)(n)COOH self-assembled monolayers

Analyst (London), 2011-12, Vol.136 (23), p.4935-4949

2011

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Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling

Nano letters, 2003-02, Vol.3 (2), p.135-138

2003

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Analyte kinetics in a nanocluster-based chemiresistor: A case study

Sensors and actuators. B, Chemical, 2013-02, Vol.177, p.936-946

2013

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Development of an ensemble Monte Carlo simulator for high-power semiconductor devices with self-consistent electromagnetism and GPU implementation

Solid-state electronics, 2023-01, Vol.199, p.108487, Article 108487

2023

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Non-local transport effects in semiconductors under low-field conditions

Solid-state electronics, 2023-02, Vol.200, p.108553, Article 108553

2023

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Diffusion-drift modeling of carbon-based nanowire FETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.337-340

2015

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Electron transport in nanocluster films with random voids

IEEE transactions on nanotechnology, 2003-06, Vol.2 (2), p.75-81

2003

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Coupled 2D/3D transport: Analysis of graphene-SiC devices

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.161-164

2015

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Fully-coupled electromechanical analysis of stress-related failure in GaN HEMTs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2276-2278

2011

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Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

Journal of applied physics, 2012-04, Vol.111 (7), p.074504-074504-16

2012

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N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.894-897

2012

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Interface Scattering as a Non-local Transport Phenomenon in Semiconductors

IEEE journal of the Electron Devices Society, 2023-01, p.1-1

2023

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Modeling cyclic voltammetry of electrode-immobilized gold nanoclusters

Electrochimica acta, 2003-12, Vol.48 (28), p.4157-4165

2003

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A 475-V high-voltage 6H-SiC lateral MOSFET

IEEE electron device letters, 1999-08, Vol.20 (8), p.431-433

1999

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Density-gradient analysis of MOS tunneling

IEEE transactions on electron devices, 2000-12, Vol.47 (12), p.2310-2319

2000

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Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

Materials science forum, 2004-01, Vol.457-460, p.689-692

2004

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On the Luminescence and Driving Force of Stacking Faults in 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.277-282

2010

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Ge profile from the growth of SiGe buried layers by molecular beam epitaxy

Applied physics letters, 1992-11, Vol.61 (18), p.2217-2219

1992

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Coulomb blockade in single-layer Au nanocluster films

Physical review. B, Condensed matter, 2001-07, Vol.64 (3), Article 033408

2001

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Density-gradient theory of tunneling: Physics and verification in one dimension

Journal of applied physics, 2008-10, Vol.104 (7), p.073726-073726-13

2008

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Nonlinear thermoelectroelastic simulation of III-N devices

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, p.121-124

Ancona, M. G.

2014

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Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors

Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices

Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study

Nonlinear Thermoelectroelastic Analysis of III-N Semiconductor Devices

Packing density of HS(CH2)(n)COOH self-assembled monolayers

Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling

Analyte kinetics in a nanocluster-based chemiresistor: A case study

Development of an ensemble Monte Carlo simulator for high-power semiconductor devices with self-consistent electromagnetism and GPU implementation

Non-local transport effects in semiconductors under low-field conditions

Diffusion-drift modeling of carbon-based nanowire FETs

Electron transport in nanocluster films with random voids

Coupled 2D/3D transport: Analysis of graphene-SiC devices

Fully-coupled electromechanical analysis of stress-related failure in GaN HEMTs

Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

Interface Scattering as a Non-local Transport Phenomenon in Semiconductors

Modeling cyclic voltammetry of electrode-immobilized gold nanoclusters

A 475-V high-voltage 6H-SiC lateral MOSFET

Density-gradient analysis of MOS tunneling

Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

On the Luminescence and Driving Force of Stacking Faults in 4H-SiC

Ge profile from the growth of SiGe buried layers by molecular beam epitaxy

Coulomb blockade in single-layer Au nanocluster films

Density-gradient theory of tunneling: Physics and verification in one dimension

Nonlinear thermoelectroelastic simulation of III-N devices

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