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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Applied physics letters, 2023-02, Vol.122 (9)

2023

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High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2024-06, Vol.124 (24)

2024

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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied physics letters, 2024-05, Vol.124 (20)

2024

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Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Thermal stability study of gallium nitride based magnetic field sensor

Journal of applied physics, 2023-10, Vol.134 (14)

2023

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Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Applied physics letters, 2018-12, Vol.113 (24)

2018

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Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Applied physics letters, 2023-12, Vol.123 (26)

2023

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High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2023-10, Vol.123 (14)

2023

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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Applied physics letters, 2024-04, Vol.124 (17)

2024

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High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Applied physics letters, 2023-10, Vol.123 (15)

2023

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Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons

Applied physics letters, 2020-10, Vol.117 (16)

2020

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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

Journal of applied physics, 2022-01, Vol.131 (3)

2022

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Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

Applied physics letters, 2022-05, Vol.120 (21)

2022

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Thermal stability study of gallium nitride based magnetic field sensor

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells

High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons

Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures

Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures

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