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Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4002-4007

2013

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IEEE_Xplore

Analog Circuit Design in Nanoscale CMOS Technologies

Proceedings of the IEEE, 2009-10, Vol.97 (10), p.1687-1714

2009

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IEEE_Xplore

Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1820-1827

2013

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IEEE_Xplore

An All-In-One Silicon Odometer for Separately Monitoring HCI, BTI, and TDDB

IEEE journal of solid-state circuits, 2010-04, Vol.45 (4), p.817-829

2010

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IEEE_Xplore

Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

IEEE electron device letters, 2013-05, Vol.34 (5), p.638-640

2013

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IEEE_Xplore

On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region

IEEE electron device letters, 2008-09, Vol.29 (9), p.1071-1073

2008

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IEEE_Xplore

on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2704-2710

2010

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IEEE_Xplore

Suppress Dynamic Hot-Carrier Induced Degradation in Polycrystalline Si Thin-Film Transistors by Using a Substrate Terminal

IEEE electron device letters, 2014-05, Vol.35 (5), p.551-553

2014

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IEEE_Xplore

off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2669-2678

2007

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IEEE_Xplore

Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3176-3180

2010

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IEEE_Xplore

on-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1279-1281

2013

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IEEE_Xplore

Analytical Threshold Voltage Model for Double-Gate MOSFETs With Localized Charges

IEEE electron device letters, 2008-08, Vol.29 (8), p.927-930

2008

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IEEE_Xplore

Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier

IEEE electron device letters, 2010-09, Vol.31 (9), p.927-929

2010

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IEEE_Xplore

A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage

IEEE electron device letters, 2009-01, Vol.30 (1), p.64-67

2009

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IEEE_Xplore

On the Origin of Anomalous Off-Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

IEEE electron device letters, 2014-06, Vol.35 (6), p.651-653

2014

Link zum Volltext
IEEE_Xplore

TCAD Assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and Its Multilayered Gate Architecture-Part I: Hot-Carrier-Reliability Evaluation

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2602-2613

2008

Link zum Volltext
IEEE_Xplore

Model of hot-carrier degradation for lateral IGBT device on SOI substrate

Electronics letters, 2013-03, Vol.49 (7), p.497-499

2013

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PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- k Dielectrics

IEEE electron device letters, 2008-04, Vol.29 (4), p.389-391

2008

Link zum Volltext
IEEE_Xplore

Hot-Carrier-Induced Forward and Reverse Saturation Current Degradations for the n-Type Symmetric EDMOS Transistor

IEEE electron device letters, 2014-07, Vol.35 (7), p.690-692

2014

Link zum Volltext
IEEE_Xplore

The Relation Between Degradation Under DC and RF Stress Conditions

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2721-2728

2011

Link zum Volltext
IEEE_Xplore

Dimension Dependence of Unusual HCI-Induced Degradation on N-Channel High-Voltage DEMOSFET

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1723-1729

2013

Link zum Volltext
IEEE_Xplore

Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process

IEEE transactions on microwave theory and techniques, 2012-04, Vol.60 (4), p.1079-1085

2012

Link zum Volltext
IEEE_Xplore

Investigation of Reliability Characteristics in NMOS and PMOS FinFETs

IEEE electron device letters, 2008-07, Vol.29 (7), p.788-790

2008

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IEEE_Xplore

Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS Devices

IEEE electron device letters, 2012-06, Vol.33 (6), p.749-751

2012

Link zum Volltext
IEEE_Xplore

Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.3078-3083

2012

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IEEE_Xplore

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Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

Analog Circuit Design in Nanoscale CMOS Technologies

Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance

An All-In-One Silicon Odometer for Separately Monitoring HCI, BTI, and TDDB

Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region

on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors

Suppress Dynamic Hot-Carrier Induced Degradation in Polycrystalline Si Thin-Film Transistors by Using a Substrate Terminal

off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown

Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges

on-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS

Analytical Threshold Voltage Model for Double-Gate MOSFETs With Localized Charges

Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier

A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage

On the Origin of Anomalous Off-Current Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure

TCAD Assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and Its Multilayered Gate Architecture-Part I: Hot-Carrier-Reliability Evaluation

Model of hot-carrier degradation for lateral IGBT device on SOI substrate

PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- k Dielectrics

Hot-Carrier-Induced Forward and Reverse Saturation Current Degradations for the n-Type Symmetric EDMOS Transistor

The Relation Between Degradation Under DC and RF Stress Conditions

Dimension Dependence of Unusual HCI-Induced Degradation on N-Channel High-Voltage DEMOSFET

Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process

Investigation of Reliability Characteristics in NMOS and PMOS FinFETs

Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS Devices

Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

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