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Delivery of essential pediatric congenital surgical care within Brazil's universal health coverage system: a national survey of pediatric surgeons

World journal of pediatric surgery, 2023-07, Vol.6 (3), p.e000534

2023

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Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling

Journal of microscopy (Oxford), 2009, Vol.233 (1), p.102-113

2009

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Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075010-075010

2010

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High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Solid-state electronics, 2009-07, Vol.53 (7), p.723-729

2009

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HfO2-based gate stacks transport mechanisms and parameter extraction

Solid-state electronics, 2010-09, Vol.54 (9), p.972-978

2010

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High- \kappa and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

IEEE electron device letters, 2008-06, Vol.29 (6), p.635-637

2008

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105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers

Solid-state electronics, 2008-09, Vol.52 (9), p.1285-1290

2008

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A two steps CVD process for the growth of silicon nano-crystals

Applied surface science, 2003-05, Vol.214 (1-4), p.359-363

2003

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Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Semiconductor science and technology, 2004-03, Vol.19 (3), p.311-318

2004

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20nm gate length trigate pFETs on strained SGOI for high performance CMOS

2010 Symposium on VLSI Technology, 2010, p.37-38

2010

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In-line transmission electron microscopy for micro and nanotechnologies research and development

Microelectronic engineering, 2008-05, Vol.85 (5-6), p.1157-1161

2008

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Characterization and modeling of nanometric SiO2 dielectrics

Microelectronic engineering, 2004-04, Vol.72 (1-4), p.121-124

2004

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Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments

Applied surface science, 2004-06, Vol.231, p.668-672

2004

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High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors

Semiconductor science and technology, 2004-05, Vol.19 (5), p.593-601

2004

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Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Semiconductor science and technology, 2005-02, Vol.20 (2), p.127-134

2005

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Charge pumping analysis of radiation effects in LOCOS parasitic transistors

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1930-1938

1997

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HfO sub(2)-based gate stacks transport mechanisms and parameter extraction

Solid-state electronics, 2010-09, Vol.54 (9), p.972-978

2010

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Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

IEEE transactions on nuclear science, 1999-08, Vol.46 (4), p.822-828

1999

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HfO 2-based gate stacks transport mechanisms and parameter extraction

Solid-state electronics, 2010, Vol.54 (9), p.972-978

2010

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SiGe channel p-MOSFETs scaling-down

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.267-270

2003

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A new nondestructive X-ray method for the determination of the 3D mineralogy at the micrometer scale

The American mineralogist, 2004-04, Vol.89 (4), p.547-553

2004

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Design and test of elementary digital circuits based on monolithic SOI JFETs

IEEE transactions on nuclear science, 1998-02, Vol.45 (1), p.41-49

1998

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Effect of rapid thermal annealing on radiation hardening of MOS devices

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1667-1673

1995

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Enhanced total dose damage in junction field effect transistors and related linear integrated circuits

IEEE transactions on nuclear science, 1996-12, Vol.43 (6), p.3060-3067

1996

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DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics

IEEE transactions on nuclear science, 1996-06, Vol.43 (3), p.1763-1767

1996

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Delivery of essential pediatric congenital surgical care within Brazil's universal health coverage system: a national survey of pediatric surgeons

Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates

High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

HfO2-based gate stacks transport mechanisms and parameter extraction

High- \kappa and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers

A two steps CVD process for the growth of silicon nano-crystals

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

20nm gate length trigate pFETs on strained SGOI for high performance CMOS

In-line transmission electron microscopy for micro and nanotechnologies research and development

Characterization and modeling of nanometric SiO2 dielectrics

Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments

High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors

Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

Charge pumping analysis of radiation effects in LOCOS parasitic transistors

HfO sub(2)-based gate stacks transport mechanisms and parameter extraction

Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

HfO 2-based gate stacks transport mechanisms and parameter extraction

SiGe channel p-MOSFETs scaling-down

A new nondestructive X-ray method for the determination of the 3D mineralogy at the micrometer scale

Design and test of elementary digital circuits based on monolithic SOI JFETs

Effect of rapid thermal annealing on radiation hardening of MOS devices

Enhanced total dose damage in junction field effect transistors and related linear integrated circuits

DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics

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