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OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

Semiconductor science and technology, 2017-04, Vol.32 (5), p.54001

2017

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The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.256-259

2015

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High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Physica status solidi. A, Applications and materials science, 2010-09, Vol.207 (9), p.2088-2092

2010

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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

Applied physics letters, 2012-11, Vol.101 (22), p.222111

2012

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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

2022 International Semiconductor Conference (CAS), 2022, p.195-198

2022

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Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Applied surface science, 2015-08, Vol.347, p.186-192

2015

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Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Applied physics letters, 2014-02, Vol.104 (8), p.82102

2014

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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H-SiC

Semiconductor science and technology, 2013-04, Vol.28 (4), p.45007

2013

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Further optimization of VLS localized epitaxy for deeper 4H‐SiC p–n junctions

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

Thin solid films, 2013-12, Vol.548, p.125-129

2013

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Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Journal of electronic materials, 2011-12, Vol.40 (12), p.2355-2362

2011

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Optical triggering of SiC thyristors using UV LEDs

Electronics letters, 2011-03, Vol.47 (7), p.459-460

2011

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4H-silicon carbide thin junction based ultraviolet photodetectors

Thin solid films, 2012-11, Vol.522, p.17-19

2012

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Experimental determination of impact ionization coefficients in 4H-SiC

Diamond and related materials, 2011-03, Vol.20 (3), p.395-397

2011

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Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase

Diamond and related materials, 2013-05, Vol.35, p.24-28

2013

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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

2015 International Semiconductor Conference (CAS), 2015, p.259-262

2015

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Edge Terminations for 4H-SiC Power Devices: A Critical Issue

Materials science forum, 2022-05, Vol.1062, p.570-575

2022

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Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Materials science forum, 2013-01, Vol.740-742, p.938-941

2013

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Simulation and design of junction termination structures for diamond Schottky diodes

Diamond and related materials, 2011, Vol.20 (5), p.729-732

2011

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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

2015 International Semiconductor Conference (CAS), 2015, p.145-148

2015

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Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs

Materials science forum, 2019-07, Vol.963, p.184-188

2019

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Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

2015 International Semiconductor Conference (CAS), 2015, p.233-236

2015

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4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method

Materials science forum, 2022-05, Vol.1062, p.341-345

2022

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Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

Materials science forum, 2009-01, Vol.600-603, p.639-642

2009

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High-Voltage SiC-JFET Fabrication and Full Characterization

Materials science forum, 2019-07, Vol.963, p.688-692

2019

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OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

The role of nickel and titanium in the formation of ohmic contacts on p-type 4H-SiC

Further optimization of VLS localized epitaxy for deeper 4H‐SiC p–n junctions

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Optical triggering of SiC thyristors using UV LEDs

4H-silicon carbide thin junction based ultraviolet photodetectors

Experimental determination of impact ionization coefficients in 4H-SiC

Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase

Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

Edge Terminations for 4H-SiC Power Devices: A Critical Issue

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Simulation and design of junction termination structures for diamond Schottky diodes

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

High-Voltage SiC-JFET Fabrication and Full Characterization

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