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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Micro & nano letters, 2020-01, Vol.15 (1), p.41-46

2020

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Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition

Journal of alloys and compounds, 2021-02, Vol.854, p.157186, Article 157186

2021

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Materials, 2021-12, Vol.14 (23), p.7377

2021

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Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Physica status solidi. PSS-RRL. Rapid research letters, 2021-07, Vol.15 (7), p.n/a

2021

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE open journal of nanotechnology, 2023, Vol.4, p.150-155

2023

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure

Thin solid films, 2015-09, Vol.590, p.335-339

2015

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Materials science & engineering. R, Reports : a review journal, 2015-08, Vol.94, p.1-56

2015

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Advanced materials (Weinheim), 2020-07, Vol.32 (27), p.e1904354-n/a

2020

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Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity

Advanced optical materials, 2021-02, Vol.9 (4), p.n/a

2021

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Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

Nature nanotechnology, 2015-02, Vol.10 (2), p.140-144

2015

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Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Sensors and actuators. B, Chemical, 2020-03, Vol.306, p.127609, Article 127609

2020

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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Advanced materials (Weinheim), 2016-09, Vol.28 (33), p.7234-7242

2016

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Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Sensors and actuators. B, Chemical, 2020-04, Vol.309, p.127832, Article 127832

2020

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Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Advanced functional materials, 2022-01, Vol.32 (5), p.n/a

2022

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Sensor applications based on AlGaN/GaN heterostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-01, Vol.263, p.114849, Article 114849

2021

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Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

Advanced functional materials, 2021-02, Vol.31 (7), p.2008452-n/a

2021

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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure

Deep traps in GaN-based structures as affecting the performance of GaN devices

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Ohmic contacts to Gallium Nitride materials

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity

Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature

Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Sensor applications based on AlGaN/GaN heterostructures

Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

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