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Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Physica status solidi. PSS-RRL. Rapid research letters, 2021-07, Vol.15 (7), p.n/a

2021

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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Advanced materials (Weinheim), 2020-07, Vol.32 (27), p.e1904354-n/a

2020

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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Advanced materials (Weinheim), 2016-09, Vol.28 (33), p.7234-7242

2016

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Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Advanced functional materials, 2022-01, Vol.32 (5), p.n/a

2022

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Sputter Epitaxy of AlN and GaN on Si(111)

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

Advanced functional materials, 2021-02, Vol.31 (7), p.2008452-n/a

2021

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AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications

Physica status solidi. A, Applications and materials science, 2024-03, Vol.221 (5), p.n/a

2024

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Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Advanced materials (Weinheim), 2016-10, Vol.28 (38), p.8446-8454

2016

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced functional materials, 2021-02, Vol.31 (8), p.n/a

2021

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Achieving Record High External Quantum Efficiency >86.7% in Solar‐Blind Photoelectrochemical Photodetection

Advanced functional materials, 2022-07, Vol.32 (28), p.n/a

2022

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Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment

Advanced functional materials, 2024-02, Vol.34 (7), p.n/a

2024

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication

Advanced materials (Weinheim), 2024-01, Vol.36 (1), p.e2307779-n/a

2024

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A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation

Advanced functional materials, 2022-05, Vol.32 (19), p.n/a

2022

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Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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High‐Electron‐Mobility Transistor‐Inspired Freestanding AlGaN/GaN/AlN Optical Waveguide for High‐Pressure Sensing Applications

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (7), p.n/a

2023

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Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors

Journal of microscopy (Oxford), 2024-03, Vol.293 (3), p.153-159

2024

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Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Sputter Epitaxy of AlN and GaN on Si(111)

Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Achieving Record High External Quantum Efficiency >86.7% in Solar‐Blind Photoelectrochemical Photodetection

Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication

A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation

Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs

Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence

High‐Electron‐Mobility Transistor‐Inspired Freestanding AlGaN/GaN/AlN Optical Waveguide for High‐Pressure Sensing Applications

Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique

Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors

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