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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Micro & nano letters, 2020-01, Vol.15 (1), p.41-46

2020

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Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Physica status solidi. PSS-RRL. Rapid research letters, 2021-07, Vol.15 (7), p.n/a

2021

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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Advanced materials (Weinheim), 2020-07, Vol.32 (27), p.e1904354-n/a

2020

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Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity

Advanced optical materials, 2021-02, Vol.9 (4), p.n/a

2021

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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Advanced materials (Weinheim), 2016-09, Vol.28 (33), p.7234-7242

2016

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Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

Advanced functional materials, 2021-02, Vol.31 (7), p.2008452-n/a

2021

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Sputter Epitaxy of AlN and GaN on Si(111)

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

Advanced functional materials, 2022-01, Vol.32 (5), p.n/a

2022

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AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications

Physica status solidi. A, Applications and materials science, 2024-03, Vol.221 (5), p.n/a

2024

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Achieving Record High External Quantum Efficiency >86.7% in Solar‐Blind Photoelectrochemical Photodetection

Advanced functional materials, 2022-07, Vol.32 (28), p.n/a

2022

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Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Advanced materials (Weinheim), 2016-10, Vol.28 (38), p.8446-8454

2016

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced functional materials, 2021-02, Vol.31 (8), p.n/a

2021

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Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment

Advanced functional materials, 2024-02, Vol.34 (7), p.n/a

2024

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication

Advanced materials (Weinheim), 2024-01, Vol.36 (1), p.e2307779-n/a

2024

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A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation

Advanced functional materials, 2022-05, Vol.32 (19), p.n/a

2022

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Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (14)

2024

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A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors

Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

Sputter Epitaxy of AlN and GaN on Si(111)

Photovoltage‐Competing Dynamics in Photoelectrochemical Devices: Achieving Self‐Powered Spectrally Distinctive Photodetection

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications

Achieving Record High External Quantum Efficiency >86.7% in Solar‐Blind Photoelectrochemical Photodetection

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Manipulating Surface Band Bending of III‐Nitride Nanowires with Ambipolar Charge‐Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication

A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation

Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers

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