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Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (8), Article 081202

2013

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Spin-orbit coupling in wurtzite heterostructures

Physical review. B, 2020-04, Vol.101 (13), p.1, Article 134416

2020

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Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Physical review. B, 2017-03, Vol.95 (12), p.125314, Article 125314

2017

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Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

Physical review. B, 2021-07, Vol.104 (4), p.1, Article 045301

2021

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Non-polar GaN/AlGaN quantum-well polariton laser at room temperature

Physical review. B, 2021-09, Vol.104 (12), p.1, Article 125311

2021

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Photon bunching reveals single-electron cathodoluminescence excitation efficiency in InGaN quantum wells

Physical review. B, 2017-07, Vol.96 (3), Article 035308

2017

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Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Physical review. B, 2020-10, Vol.102 (15), p.1, Article 155304

2020

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Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy

Physical review. B, 2017-07, Vol.96 (4), Article 041303

2017

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Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities

Physical review. B, Condensed matter and materials physics, 2013-12, Vol.88 (23), Article 235306

2013

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Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas

Physical review. B, Condensed matter and materials physics, 2012-06, Vol.85 (23), Article 235314

2012

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Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

Physical review. B, Condensed matter and materials physics, 2014-01, Vol.89 (3), Article 035204

2014

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Effects of strain on the band structure of group-III nitrides

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (12), Article 125118

2014

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Phonon scattering in strained transition layers for GaN heteroepitaxy

Physical review. B, Condensed matter and materials physics, 2014-03, Vol.89 (11), Article 115301

2014

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Band offsets in cubic GaN/AlN superlattices

Physical review. B, Condensed matter and materials physics, 2011-05, Vol.83 (19), Article 195301

2011

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Electrical and optical properties of iron in GaN, AlN, and InN

Physical review. B, 2019-05, Vol.99 (20), p.205202, Article 205202

2019

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Elastic strain relaxation in GaN/AlN nanowire superlattice

Physical review. B, Condensed matter and materials physics, 2010-04, Vol.81 (15), Article 153306

2010

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Unified theory of direct or indirect band-gap nature of conventional semiconductors

Physical review. B, 2018-12, Vol.98 (24), p.1, Article 245203

2018

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Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

Physical review. B, Condensed matter and materials physics, 2014-11, Vol.90 (20), Article 205206

2014

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Phonon thermal conductance across GaN-AlN interfaces from first principles

Physical review. B, 2019-02, Vol.99 (7), p.075202, Article 075202

2019

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Anomalous pressure effect on the thermal conductivity of ZnO, GaN, and AlN from first-principles calculations

Physical review. B, 2018-10, Vol.98 (14), p.144303, Article 144303

2018

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Polarization properties of single zinc-blende GaN/AlN quantum dots

Physical review. B, Condensed matter and materials physics, 2014-12, Vol.90 (23), Article 235312

2014

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Single layers and multilayers of GaN and AlN in square-octagon structure: Stability, electronic properties, and functionalization

Physical review. B, 2017-11, Vol.96 (20), Article 205427

2017

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Ground-state resonant two-photon transitions in wurtzite GaN/AlN quantum dots

Physical review. B, 2019-06, Vol.99 (24), p.1, Article 245303

2019

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Electrostatic built-in fields in wurtzite III-N nanostructures: Impact of growth plane on second-order piezoelectricity

Physical review. B, 2017-10, Vol.96 (15), Article 155307

2017

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In-plane commensurate GaN/AlN junctions: Single-layer composite structures, single and multiple quantum wells and quantum dots

Physical review. B, 2017-04, Vol.95 (15), p.155435, Article 155435

2017

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Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

Spin-orbit coupling in wurtzite heterostructures

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting

Non-polar GaN/AlGaN quantum-well polariton laser at room temperature

Photon bunching reveals single-electron cathodoluminescence excitation efficiency in InGaN quantum wells

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy

Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities

Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

Effects of strain on the band structure of group-III nitrides

Phonon scattering in strained transition layers for GaN heteroepitaxy

Band offsets in cubic GaN/AlN superlattices

Electrical and optical properties of iron in GaN, AlN, and InN

Elastic strain relaxation in GaN/AlN nanowire superlattice

Unified theory of direct or indirect band-gap nature of conventional semiconductors

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

Phonon thermal conductance across GaN-AlN interfaces from first principles

Anomalous pressure effect on the thermal conductivity of ZnO, GaN, and AlN from first-principles calculations

Polarization properties of single zinc-blende GaN/AlN quantum dots

Single layers and multilayers of GaN and AlN in square-octagon structure: Stability, electronic properties, and functionalization

Ground-state resonant two-photon transitions in wurtzite GaN/AlN quantum dots

Electrostatic built-in fields in wurtzite III-N nanostructures: Impact of growth plane on second-order piezoelectricity

In-plane commensurate GaN/AlN junctions: Single-layer composite structures, single and multiple quantum wells and quantum dots

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