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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Sensors and actuators. B, Chemical, 2020-03, Vol.306, p.127609, Article 127609

2020

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Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Sensors and actuators. B, Chemical, 2020-04, Vol.309, p.127832, Article 127832

2020

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AlGaN/GaN heterostructure pH sensor with multi-sensing segments

Sensors and actuators. B, Chemical, 2018-05, Vol.260, p.134-139

2018

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Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines (Basel), 2022-12, Vol.13 (12), p.2133

2022

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AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer

Sensors and actuators. B, Chemical, 2020-08, Vol.317, p.128234, Article 128234

2020

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Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film

Sensors and actuators. B, Chemical, 2021-03, Vol.330, p.129339, Article 129339

2021

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Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure

Sensors and actuators. B, Chemical, 2021-03, Vol.331, p.129320, Article 129320

2021

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AlGaN/GaN heterojunction hydrogen sensor using ZnO-nanoparticles/Pd dual catalyst layer

Sensors and actuators. B, Chemical, 2020-12, Vol.325, p.128946, Article 128946

2020

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Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications

Energies (Basel), 2020-05, Vol.13 (9), p.2363

2020

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Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors

Sensors and actuators. B, Chemical, 2019-05, Vol.287, p.250-257

2019

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A salivary urea sensor based on a microsieve disposable gate AlGaN/GaN high electron mobility transistor

Analytical methods, 2024-07, Vol.16 (26), p.4381-4386

2024

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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

Sensors and actuators. B, Chemical, 2021-12, Vol.349, p.130811, Article 130811

2021

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AlGaN/GaN heterostructures for high power and high-speed applications

International journal of materials research, 2023-07, Vol.114 (7-8), p.712-717

Joshi, Bhubesh Chander

2023

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Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies (Basel), 2023-04, Vol.16 (7), p.2978

2023

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Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Sensors and actuators. B, Chemical, 2018-11, Vol.274, p.636-644

2018

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Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Study

Micromachines (Basel), 2024-09, Vol.15 (9), p.1126

2024

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Neutron radiation hardness of aluminum gallium nitride UV LEDs at various wavelengths

Review of scientific instruments, 2021-04, Vol.92 (4)

2021

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Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Micromachines (Basel), 2019-07, Vol.10 (8), p.492

2019

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Screening effects on the mobility properties in AlGaN/GaN heterostructures with varied Al content

International journal of modern physics. C, Computational physics, physical computation, 2022-12, Vol.33 (12)

2022

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Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices

Optics and spectroscopy, 2024-02, Vol.132 (2), p.193-195

2024

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Unipolar Arc Ignited Partial Discharge for 650-V AlGaN/GaN HEMTs during the DC Breakdown Voltage Measurement

Energies (Basel), 2022-10, Vol.15 (20), p.7608

2022

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Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Applied physics letters, 2013-11, Vol.103 (21), p.212107

2013

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Simulation and machine learning modelling based comparative study of InAlGaN and AlGaN high electron mobility transistors for the detection of HER-2

Analytical methods, 2021-09, Vol.13 (33), p.3659-3666

2021

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Enhancing the sensitivity of the reference electrode free AlGaN/GaN HEMT based pH sensors by controlling the threshold voltage

Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

AlGaN/GaN heterostructure pH sensor with multi-sensing segments

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer

Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film

Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure

AlGaN/GaN heterojunction hydrogen sensor using ZnO-nanoparticles/Pd dual catalyst layer

Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications

Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors

A salivary urea sensor based on a microsieve disposable gate AlGaN/GaN high electron mobility transistor

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

AlGaN/GaN heterostructures for high power and high-speed applications

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Study

Neutron radiation hardness of aluminum gallium nitride UV LEDs at various wavelengths

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Screening effects on the mobility properties in AlGaN/GaN heterostructures with varied Al content

Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices

Unipolar Arc Ignited Partial Discharge for 650-V AlGaN/GaN HEMTs during the DC Breakdown Voltage Measurement

Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Simulation and machine learning modelling based comparative study of InAlGaN and AlGaN high electron mobility transistors for the detection of HER-2

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