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Conjugated Polymer Synthesis via Catalyst-Transfer Polycondensation (CTP): Mechanism, Scope, and Applications

Macromolecules, 2013-11, Vol.46 (21), p.8395-8405

2013

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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied physics letters, 2018-02, Vol.112 (6)

2018

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On compensation in Si-doped AlN

Applied physics letters, 2018-04, Vol.112 (15)

2018

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The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of applied physics, 2014-09, Vol.116 (12)

2014

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Chain-Growth Polymerization of Aryl Grignards Initiated by a Stabilized NHC-Pd Precatalyst

Macromolecular rapid communications., 2012-05, Vol.33 (9), p.842-847

2012

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Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Applied physics letters, 2015-06, Vol.106 (23)

2015

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Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Electronic Biosensors Based on III-Nitride Semiconductors

Annual review of analytical chemistry (Palo Alto, Calif.), 2015-07, Vol.8 (1), p.149-169

2015

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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Evidence for a preferential intramolecular oxidative addition in Ni-catalyzed cross-coupling reactions and their impact on chain-growth polymerizations

Chemical science (Cambridge), 2013-03, Vol.4 (4), p.1620

2013

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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High free carrier concentration in p-GaN grown on AlN substrates

Applied physics letters, 2017-07, Vol.111 (3)

2017

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Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Journal of applied physics, 2014-03, Vol.115 (10)

2014

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Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied physics letters, 2014-12, Vol.105 (22), p.222101

2014

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Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

Journal of applied physics, 2014-10, Vol.116 (13)

2014

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Polarity control and growth of lateral polarity structures in AlN

Applied physics letters, 2013-05, Vol.102 (18)

2013

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Schottky contact formation on polar and non-polar AlN

Journal of applied physics, 2014-11, Vol.116 (19)

2014

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Limitations of Using Small Molecules to Identify Catalyst-Transfer Polycondensation Reactions

ACS macro letters, 2016-01, Vol.5 (1), p.69-72

2016

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Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10), p.100302

2017

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Sapphire decomposition and inversion domains in N-polar aluminum nitride

Applied physics letters, 2014-01, Vol.104 (3)

2014

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A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Exciton transitions and oxygen as a donor in m -plane AlN homoepitaxial films

Journal of applied physics, 2014-04, Vol.115 (13)

2014

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Conjugated Polymer Synthesis via Catalyst-Transfer Polycondensation (CTP): Mechanism, Scope, and Applications

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

On compensation in Si-doped AlN

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Chain-Growth Polymerization of Aryl Grignards Initiated by a Stabilized NHC-Pd Precatalyst

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Electronic Biosensors Based on III-Nitride Semiconductors

On the origin of the 265 nm absorption band in AlN bulk crystals

Evidence for a preferential intramolecular oxidative addition in Ni-catalyzed cross-coupling reactions and their impact on chain-growth polymerizations

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

High free carrier concentration in p-GaN grown on AlN substrates

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Polarity control and growth of lateral polarity structures in AlN

Schottky contact formation on polar and non-polar AlN

Limitations of Using Small Molecules to Identify Catalyst-Transfer Polycondensation Reactions

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Sapphire decomposition and inversion domains in N-polar aluminum nitride

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Exciton transitions and oxygen as a donor in m -plane AlN homoepitaxial films

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